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MBT3946DW1T2G
P1-P3
P4-P6
P7-P9
P10-P11
MBT3946DW1T1G,
SMBT3946DW1T1G
http://onsemi.com
4
(NPN)
Figure 5. T
urn-On
T
ime
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
TIME (ns)
1.0
2.0
3.0
10
20
70
5
100
t , RISE TIME (ns)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0
7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0
3.0
10
20
70
5
100
5.0
7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0
3.0
10
20
70
5
100
5.0
7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0
3.0
10
20
70
5
100
5.0
7.0
30
50
200
10
30
7
20
r
t , F
ALL
TIME (ns)
f
t , STORAGE TIME (ns)
s
′
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
t
′
s
= t
s
-
1
/
8
t
f
I
B1
=
I
B2
(NPN)
(NPN)
(NPN)
(NPN)
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE V
ARIA
TIONS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C, Bandwidth = 1.0 Hz)
Figure 9. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10. Noise Figure
R
S
, SOURCE RESIST
ANCE (k OHMS)
0
NF
, NOISE FIGURE (dB)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
14
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
m
A
I
C
= 100
m
A
SOURCE RESIST
ANCE = 200
W
I
C
= 1.0 mA
SOURCE RESIST
ANCE = 200
W
I
C
= 0.5 mA
SOURCE RESIST
ANCE = 500
W
I
C
= 100
m
A
SOURCE RESIST
ANCE = 1.0 k
I
C
= 50
m
A
(NPN)
(NPN)
MBT3946DW1T1G,
SMBT3946DW1T1G
http://onsemi.com
5
(NPN)
h P
ARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25
°
C)
Figure 1
1. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT
ADMITT
ANCE ( mhos)
Figure 13. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 14. V
oltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOL
T
AGE FEEDBACK RA
TIO (x 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
2
1
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
fe
m
-4
(NPN)
(NPN)
(NPN)
(NPN)
Figure 15. Safe Operating Area
V
CE
, COLLECTOR EMITTER VOL
T
AGE (V)
1
1
10
100
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Single Pulse T
est at T
A
= 25
°
C
(NPN)
1 s
1 ms
1
m
s
10 ms
100 ms
MBT3946DW1T1G,
SMBT3946DW1T1G
http://onsemi.com
6
(NPN)
TYPICAL ST
A
TIC CHARACTERISTICS
Figure 16. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
V
CE
= 1.0 V
T
J
= +125
°
C
+25
°
C
-55
°
C
(NPN)
Figure 17. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOL
T
AGE (VOLTS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
I
C
= 1.0 mA
T
J
= 25
°
C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
(NPN)
Figure 18. “ON” V
oltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 19. T
emperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V
, VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
0
100
-0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
200
°
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
+25
°
C TO +125
°
C
-55
°
C TO +25
°
C
+25
°
C TO +125
°
C
-55
°
C TO +25
°
C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
(NPN)
(NPN)
P1-P3
P4-P6
P7-P9
P10-P11
MBT3946DW1T2G
Mfr. #:
Buy MBT3946DW1T2G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V Dual Complementary
Lifecycle:
New from this manufacturer.
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