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VS-CPV362M4FPBF

P1-P3P4-P6P7-P9
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
1
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT SIP Module (Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
•HEXFRED
®
soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for
current vs. frequency curve
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
V
CES
600 V
I
RMS
per phase (3.1 kW total)
with T
C
= 90 °C
11 A
T
J
125 °C
Supply voltage 360 V
DC
Power factor 0.8
Modulation depth See fig. 1 115 %
V
CE(on)
(typical)
at I
C
= 4.8 A, 25 °C
1.41 V
Speed 1 kHz to 8 kHz
Package SIP
Circuit configuration Three phase inverter
SIP (IMS-2)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current, each
IGBT
I
C
T
C
= 25 °C 8.8
A
T
C
= 100 °C 4.8
Pulsed collector current I
CM
Repetitive rating; V
GE
= 20 V,
pulse width limited by maximum
junction temperature. See fig. 20
26
Clamped inductive load current I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 μH, R
G
= 50 See fig. 19
800
Diode continuous forward current I
F
T
C
= 100 °C 3.4
Diode maximum forward current I
FM
26
Gate to emitter voltage V
GE
± 20 V
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
RMS
Maximum power dissipation, each
IGBT
P
D
T
C
= 25 °C 23
W
T
C
= 100 °C 9.1
Operating junction and
storage temperature range
T
J
, T
Stg
-40 to +150
°C
Soldering temperature For 10 s 300 (0.063" (1.6 mm) from case)
Mounting torque 6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction R
thJC
(IGBT) - 5.5
°C/WJunction to case, each diode, one diode in conduction R
thJC
(diode) - 9.0
Case to sink, flat, greased surface R
thCS
(module) 0.1 -
Weight of module 20 (0.7) - g (oz.)
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
2
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 250 μA
Pulse width 80 μs, duty factor 0.1 %
600 - - V
Temperature coeff. of breakdown voltage V
(BR)CES
T
J
V
GE
= 0 V, I
C
= 1.0 mA - 0.72 - V/°C
Collector to emitter saturation voltage V
CE(on)
I
C
= 4.8 A
V
GE
= 15 V
See fig. 2, 5
- 1.41 1.7
V
I
C
= 8.8 A - 1.66 -
I
C
= 4.8 A, T
J
= 150 °C - 1.42 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 3.0 - 6.0
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 100 nA
Temperature coeff. of threshold voltage V
GE(th)
/T
J
V
GE
= 0 V, I
C
= 1.0 mA - -11 - mV/°C
Forward transconductance g
fe
V
CE
= 100 V, I
C
= 4.8 A
Pulse width 5.0 μs; single shot
2.9 5.0 - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V -
-
250
μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 1700
Diode forward voltage drop V
FM
I
C
= 8.0 A
I
C
= 8.0 A, T
J
= 150 °C
See fig. 13
-1.41.7
V
-1.31.6
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn on) Q
g
I
C
= 4.8 A
V
CC
= 400 V
See fig. 8
-3045
nCGate to emitter charge (turn on) Q
ge
-4.06.0
Gate to collector charge Q
gc
-1320
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 4.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Energy losses include “tail” and
diode reversev recovery.
See fig. 9, 10, 18
-49-
ns
Rise time t
r
-22-
Turn-off delay time t
d(off)
- 200 300
Fall time t
f
- 214 320
Turn-on switching loss E
on
-0.23-
mJTurn-off switching loss E
off
-0.33-
Total switching loss E
ts
- 0.45 0.70
Turn-on delay time t
d(on)
T
J
= 150 °C,
I
C
= 4.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
-48-
ns
Rise time t
r
-25-
Turn-off delay time t
d(off)
- 435 -
Fall time t
f
- 364 -
Total switching loss E
ts
-0.93- mJ
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
See fig. 7
- 340 -
pFOutput capacitance C
oes
-63-
Reverse transfer capacitance C
res
-5.9-
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 8.0 A
V
R
= 200 V
dI/dt = 200 A/μs
-3755
ns
T
J
= 125 °C - 55 90
Diode peak reverse recovery current I
rr
T
J
= 25 °C
See fig. 15
-3.550
A
T
J
= 125 °C - 4.5 8.0
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
- 65 138
nC
T
J
= 125 °C - 124 360
Diode peak rate of fall of recovery during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
- 240 -
A/μs
T
J
= 125 °C - 210 -
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
3
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0
4
3
2
1
5
6
7
8
9
0.1 1
f - Frequency (kHz)
Load Current (A)
100
0.00
0.29
0.58
0.88
1.17
1.46
1.75
2.05
2.34
2.63
10
T
C
= 90 °C
T
J
= 125 °C
Power factor = 0.8
Modulation depth = 1.15
V
CC
= 50 % of rated voltage
Total Output Power (kW)
1
100
10
I
C
- Collector to Ermitter Current (A)
V
CE
- Collector to Emitter Voltage (V)
10
1
V
GE
= 15 V
20 µs pulse width
T
J
= 25 °C
T
J
= 150 °C
1
100
10
I
C
- Collector to Emitter Current (A)
V
GE
- Gate to Emitter Voltage (V)
6 7 8 9 10 11 12 13 145
V
CC
= 50 V
5 µs pulse width
T
J
= 25 °C
T
J
= 150 °C
0
2
4
6
8
10
Maximum DC Collector Current (A)
T
C
- Case Temperature (°C)
25 50 75 100 125 150
1.0
2.0
1.5
2.5
V
CE
- Collector to Emitter Voltage (V)
T
J
- Junction Temperature (°C)
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
V
GE
= 15 V
80 µs pulse width
I
C
= 9.6 A
I
C
= 4.8 A
I
C
= 2.4 A
P1-P3P4-P6P7-P9

VS-CPV362M4FPBF

Mfr. #:
Buy VS-CPV362M4FPBF
Manufacturer:
Vishay Semiconductors
Description:
IGBT Transistors 600 Volt 4.8 Amp
Lifecycle:
New from this manufacturer.
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