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VS-CPV362M4FPBF

P1-P3P4-P6P7-P9
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
4
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0
800
1000
600
400
200
C - Capacitance (pF)
V
CE
- Collector to Emitter Voltage (V)
10
100
1
V
GE
= 0 V, f = 1 MHz
C
ies
= C
ge
+ C
ce
shorted
C
res
= C
gc
C
oes
= C
ce
+ C
gc
C
ies
C
oes
C
res
0
12
16
4
8
20
V
GE
- Gate to Emitter Voltage (V)
Q
G
- Total Gate Charge (nC)
6121824
30
0
V
CC
= 400 V
I
C
= 4.8 A
0.42
0.43
0.44
0.45
0.46
Total Switching Losses (mJ)
R
G
- Gate Resistance (Ω)
20 30 40
50
10
V
CC
= 480 V
V
GE
= 15 V
T
J
= 25 °C
I
C
= 4.8 A
0.1
1
10
Total Switching Losses (mJ)
T
J
- Junction Temperature (°C)
- 40 - 20 0 604020 80 100 120 140 160- 60
R
G
= 50 Ω
V
GE
= 15 V
V
CC
= 480 V
I
C
= 9.6 A
I
C
= 4.8 A
I
C
= 2.4 A
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
5
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 14 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 15 - Typical Recovery Current vs. dI
F
/dt
Fig. 16 - Typical Stored Charge vs. dI
F
/dt
0.0
0.5
1.0
1.5
2.0
Total Switching Losses (mJ)
I
C
- Collector to Emitter Current (A)
2468100
R
G
= 50 Ω
T
J
= 150 °C
V
CC
= 480 V
V
GE
= 15 V
1
100
10
I
C
- Collector to Emitter Current (A)
V
CE
- Collector to Emitter Voltage (V)
10 100
1000
1
Safe operating area
V
GE
= 20 V
T
J
= 125 °C
0.1
1
100
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop
0.4 2.0 2.41.61.20.8 2.8
3.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0
100
20
40
60
80
t
rr
(ns)
dI
F
/dt
(A/µs)
1000
100
I
F
= 8.0 A
I
F
= 4.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
1
100
10
I
IRRM
- (A)
dI
F
/dt - (A/µs)
1000
100
I
F
= 16 A
I
F
= 8.0 A
I
F
= 4.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
6
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 17 - Typical dI
(REC)M
/dt vs dI
F
/dt
Fig. 18a - Test Circuit for Measurement of I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
,
I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 18b - Test Waveforms of Circuit of Fig. 18a,
Defining E
off
, t
d(off)
, t
f
Fig. 18c - Test Waveforms of Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d - Test Waveforms of Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
100
10 000
1000
dI
(rec)M
/dt - (A/µs)
dI
F
/dt - (A/µs)
1000
100
I
F
= 16 A
I
F
= 8.0 A
I
F
= 4.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
Same type
device as
D.U.T.
D.U.T.
430 μF
80 %
of V
CE
I
C
V
CE
t1
t2
90 % I
C
10 %
V
CE
t
d
(off)
tf
I
C
5 % I
C
t1 + 5 µs
V
CE
I
C
dt
t1
90 % V
GE
+ V
GE
∫
Eoff =
∫
t2
V
CE
I
C
dt
t1
5 % V
CE
I
C
I
pk
V
CC
10 %
I
C
Vce
t1
t2
D.U.T. voltage
and current
Gate voltage D.U.T.
+ V
G
10 % + V
G
90 % I
C
tr
t
d
(on)
Eon =
Diode reverse
recovery energy
tx
∫
E
rec
=
t4
V
d
I
C
dt
t3
t4
t3
Diode recovery
waveforms
I
C
V
pk
10 % V
CC
I
rr
10 % I
rr
V
CC
t
rr
∫
Q
rr
=
t
rr
I
C
dt
tx
V
G
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
t0
t1
t2
P1-P3P4-P6P7-P9

VS-CPV362M4FPBF

Mfr. #:
Buy VS-CPV362M4FPBF
Manufacturer:
Vishay Semiconductors
Description:
IGBT Transistors 600 Volt 4.8 Amp
Lifecycle:
New from this manufacturer.
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