© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
P2N2222A/D
P2N2222A
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
75 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−92
(T0−226AA)
CASE 29−11
STYLE 17
MARKING
DIAGRAM
http://onsemi.com
(Note: Microdot may be in either location)
1
2
3
P2N2
222A
AYWW G
G
P2N2 = Device Code
222A = Specific Device
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
P2N2222ARL1 TO−92
5000 Units / Bulk
P2N2222ARL1G TO−92
(Pb−Free)
5000 Units / Bulk
Device Package Shipping
†
P2N2222A TO−92
2000 / Tape & Ammo
P2N2222AG TO−92
(Pb−Free)
2000 / Tape & Ammo
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
P2N2222AZL1 TO−92
P2N2222AZL1G TO−92
(Pb−Free)
2000 / Tape & Reel
2000 Units / Tube
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.