P2N2222AZL1

P2N2222A
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4
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20
70
5.0
100
5.0 7.0 30 50
200
10
30
7.0
20
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
I
C
, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
= t
s
− 1/8 t
f
t
f
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20
50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
R
S
= OPTIMUM
R
S
= SOURCE
R
S
= RESISTANCE
I
C
= 1.0 mA, R
S
= 150 W
500 mA, R
S
= 200 W
100 mA, R
S
= 2.0 kW
50 mA, R
S
= 4.0 kW
f = 1.0 kHz
I
C
= 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500
1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 50
0.2 0.3 0.5 0.7
C
cb
20
30
C
eb
Figure 10. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f
T
, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20
30 50 70 100
V
CE
= 20 V
T
J
= 25°C
P2N2222A
http://onsemi.com
5
Figure 11. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
−0.5
0
+0.5
COEFFICIENT (mV/ C)
−1.0
−1.5
−2.5
°
R
q
VC
for V
CE(sat)
R
q
VB
for V
BE
0.1 1.0 2.0 5.0 10 20
50
0.2 0.5
100 200 500 1.0 k
1.0 V
−2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
P2N2222A
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
1
TO92 (TO226)
CASE 2911
ISSUE AL
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P2N2222AZL1

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Description:
Bipolar Transistors - BJT 600mA 75V NPN
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