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MT18VDVF12872Y-335D4

P1-P3P4-P6P7-P9P10-P12
Products and specifications discussed herein are subject to change by Micron without notice.
1GB (x72, ECC, SR): 184-Pin DDR VLP RDIMM
Features
PDF: 09005aef81c7380b/Source: 09005aef81c7380e Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF18C_128x72.fm - Rev. C 11/07 EN
1 ©2005 Micron Technology, Inc. All rights reserved.
DDR SDRAM VLP RDIMM
MT18VDVF12872 – 1GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 184-pin, very low profile registered dual in-line
memory module (VLP RDIMM)
• Fast data transfer rates: PC2700 or PC3200
• 1GB (128 Meg x 72)
• Supports ECC error detection and correction
•V
DD = VDDQ = +2.5V
(-40B: V
DD = VDDQ = +2.6V)
•V
DDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal pipelined double data rate (DDR)
2n-prefetch architecture
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
Figure 1: 184-Pin VLP RDIMM (MO-206)
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
adds one clock cycle to CL.
Options
Marking
• Operating temperature
1
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C) I
•Package
– 184-pin DIMM (standard) G
– 184-pin DIMM (Pb-free) Y
• Memory clock, speed, CAS latency
2
– 5.0ns (200 MHz), 400 MT/s, CL = 3 -40B
– 6.0ns (166 MHz), 333 MT/s, CL = 2.5 -335
PCB height: 18.29mm (0.72in)
Notes: 1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns) NotesCL = 3 CL = 2.5 CL = 2
-40B PC3200 400 333 266 15 15 55
-335 PC2700 – 333 266 18 18 60 1
PDF: 09005aef81c7380b/Source: 09005aef81c7380e Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF18C_128x72.fm - Rev. C 11/07 EN
2 ©2005 Micron Technology, Inc. All rights reserved
1GB (x72, ECC, SR): 184-Pin DDR VLP RDIMM
Features
Notes: 1. Data sheets for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT18VDVF12872Y-335F1
.
Table 2: Addressing
Parameter 1GB
Refresh count 8K
Row address 8K (A0–A12)
Device bank address 4 (BA0, BA1)
Device configuration 512Mb (128 Meg x 4)
Column address 4K (A0–A9, A11, A12)
Module rank address 1 (S0#)
Table 3: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT46V128M4,
1
512Mb DDR SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18VDVF12872G-40B__ 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT18VDVF12872Y-40B__ 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT18VDVF12872G-335__ 1GB 128 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 3-3-3
MT18VDVF12872Y-335__ 1GB 128 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 3-3-3
PDF: 09005aef81c7380b/Source: 09005aef81c7380e Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF18C_128x72.fm - Rev. C 11/07 EN
3 ©2005 Micron Technology, Inc. All rights reserved
1GB (x72, ECC, SR): 184-Pin DDR VLP RDIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Table 4: Pin Assignments
184-Pin VLP RDIMM Front 184-Pin VLP RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1V
REF 24 DQ17 47 DQS8 70 VDD 93 VSS 116 VSS 139 VSS 162 DQ47
2 DQ0 25 DQS2 48 A0 71 NC 94 DQ4 117 DQ21 140 DQS17 163 NC
3V
SS 26 VSS 49 CB2 72 DQ48 95 DQ5 118 A11 141 A10 164 VDDQ
4 DQ1 27 A9 50 V
SS 73 DQ49 96 VDDQ 119 DQS11 142 CB6 165 DQ52
5DQS028DQ1851CB374 VSS 97 DQS9 120 VDD 143 VDDQ 166 DQ53
6 DQ2 29 A7 52 BA1 75 NC 98 DQ6 121 DQ22 144 CB7 167 NC
7V
DD 30 VDDQ 53 DQ32 76 NC 99 DQ7 122 A8 145 VSS 168 VDD
8 DQ3 31 DQ19 54 VDDQ77VDDQ100VSS 123 DQ23 146 DQ36 169 DQS15
9 NC 32 A5 55DQ3378DQS6 101 NC 124 V
SS 147 DQ37 170 DQ54
10 RESET# 33 DQ24 56 DQS4 79 DQ50 102 NC 125 A6 148 V
DD 171 DQ55
11 VSS 34 VSS 57 DQ34 80 DQ51 103 NC 126 DQ28 149 DQS13 172 VDDQ
12 DQ8 35 DQ25 58 V
SS 81 VSS 104 VDDQ 127 DQ29 150 DQ38 173 NC
13 DQ9 36 DQS3 59 BA0 82 NC 105 DQ12 128 V
DDQ 151 DQ39 174 DQ60
14 DQS1 37 A4 60 DQ35 83 DQ56 106 DQ13 129 DQS12 152 VSS 175 DQ61
15 V
DDQ38 VDD 61 DQ40 84 DQ57 107 DQS10 130 A3 153 DQ44 176 VSS
16 NC 39 DQ26 62 VDDQ85 VDD 108 VDD 131 DQ30 154 RAS# 177 DQS16
17 NC 40 DQ27 63 WE# 86 DQS7 109 DQ14 132 VSS 155 DQ45 178 DQ62
18 V
SS 41 A2 64 DQ41 87 DQ58 110 DQ15 133 DQ31 156 VDDQ 179 DQ63
19 DQ10 42 V
SS 65 CAS# 88 DQ59 111 NC 134 CB4 157 S0# 180 VDDQ
20 DQ11 43 A1 66 VSS 89 VSS 112 VDDQ 135 CB5 158 NC 181 SA0
21 CKE0 44 CB0 67 DQS5 90 NC 113 NC 136 V
DDQ 159 DQS14 182 SA1
22 V
DDQ 45 CB1 68 DQ42 91 SDA 114 DQ20 137 CK0 160 VSS 183 SA2
23 DQ16 46 VDD 69 DQ43 92 SCL 115 A12 138 CK0# 161 DQ46 184 VDDSPD
P1-P3P4-P6P7-P9P10-P12

MT18VDVF12872Y-335D4

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Manufacturer:
Micron
Description:
MODULE DDR SDRAM 1GB 184RDIMM
Lifecycle:
New from this manufacturer.
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