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FGH30N6S2

P1-P3P4-P6P7-P9P10-P12
©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves (Continued)
E
ON2
, TURN-ON ENERGY LOSS (
µ
J)
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
250
0
5 101520250
350
300
50
400
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
150
R
G
= 10
Ω
, L = 500mH, V
CE
= 390V
E
OFF
TURN-OFF ENERGY LOSS (
µ
J)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
300
0
600
5 101520250
500
400
200
R
G
= 10
Ω
, L = 500mH, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
0
6
8
12
14
5 101520250
16
4
2
10
R
G
= 10
Ω
, L = 500
µ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
0
20
10
30
25
5101520250
15
T
J
= 25
o
C, V
GE
= 10V, V
GE
=15V
T
J
= 125
o
C, V
GE
= 15V, V
GE
= 10V
R
G
= 10
Ω
, L = 500mH, V
CE
= 390V
5
20
30
40
50
60
70
80
90
0 5 10 15 20 25
t
d(OFF
) TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
R
G
= 10
Ω
, L = 500
µ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
40
60
80
100
105 1520250
120
R
G
= 10
Ω
, L = 500
µ
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
79 16
75
150
5
125
100
175
6 8 10 11 12 13 14 15
PULSE DURATION = 250
µ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= -55
o
C
T
J
= 125
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= 25
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
2
10
0
6
4
8
12
2 6 10 120
14
16
14 16 18 2448 20
I
G(REF)
= 1mA, R
L
= 25
Ω
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
22
I
CE
= 6A
0
0.6
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
0.8
12525
1.2
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
1.0
I
CE
= 24A
I
CE
= 12A
0.4
0.2
R
G
= 10
Ω
, L = 500mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
150
0.1
10 100
R
G
, GATE RESISTANCE (
Ω
)
1.0 1000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
10
1
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
µ
H, V
CE
= 390V, V
GE
= 15V
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
0 1020304050
0.0
0.4
1.2
1.4
0.8
C
OES
C
IES
60 70 80 90 100
0.2
0.6
1.0
FREQUENCY = 1MHz
1.5
2.0
2.5
3.0
3.5
6 7 8 9 10 11 12 13 14 15 16
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 12A
DUTY CYCLE < 0.5%
PULSE DURATION = 250
µ
s, T
J
= 25
o
C
I
CE
= 6A
I
CE
= 24A
©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves (Continued)
0.5 1.0 1.5 2.5
I
EC
, FORWARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
02.0
0
8
12
16
25
o
C
125
o
C
4
24
20
PULSE DURATION = 250
µ
s
DUTY CYCLE < 0.5%,
3.0
100
50
0
t
rr
, REVERSE RECOVERY TIMES (ns)
I
EC
, FORWARD CURRENT (A)
21210
125
75
25
68
150
200
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/
µ
s, V
CE
= 390V
125
o
C t
rr
4
175
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 12A, V
CE
= 390V
300 400 500 700 800
t
rr
, REVERSE RECOVERY TIMES (ns)
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/ms)
200 600
50
0
75
100
125
150
175
900 1000
25
250
150
50
0
Q
rr
, REVERSE RECOVERY CHARGE (nC)
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
µ
s)
1000500
300
200
100
200 300 400 900600 700 800
125
o
C, I
EC
= 12A
125
o
C, I
EC
= 6A
25
o
C, I
EC
= 6A
25
o
C, I
EC
= 12A
V
CE
= 390V
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3.0
6.0
5.5
7.0
6.5
V
CE
= 390V, T
J
= 125°C
I
EC
= 12A
I
EC
= 6A
S, REVERSE RECOVERY SOFTNESS FACTOR
700 1000900400200 500 600 800300
4.0
3.5
5.0
4.5
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3
7
6
10
8
V
CE
= 390V, T
J
= 125°C
I
EC
= 12A
I
EC
= 6A
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
700 1000900400200 500 600 800300
5
4
9
P1-P3P4-P6P7-P9P10-P12

FGH30N6S2

Mfr. #:
Buy FGH30N6S2
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors Sgl N-Ch 600V SMPS
Lifecycle:
New from this manufacturer.
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