www.vishay.com Document Number: 90362
2 S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
OSS
eff. is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 80% V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
R
thJA
-40
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-0.75
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 600 - - V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 25
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 5.5 A
b
- - 0.75
Forward Transconductance g
fs
V
DS
= 25 V, I
D
= 3.1 A
b
5.5 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
- 1400 -
pF
Output Capacitance C
oss
- 180 -
Reverse Transfer Capacitance C
rss
-7.1-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 1957 -
V
DS
= 480 V, f = 1.0 MHz - 49 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 480 V
c
-96-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 9.2 A, V
DS
= 400 V
see fig. 6 and 13
b
--49
nC
Gate-Source Charge Q
gs
--13
Gate-Drain Charge Q
gd
--
20
Turn-On Delay Time t
d(on)
V
DD
= 300 V, I
D
= 9.2 A
R
g
= 9.1 , R
D
= 35.5 , see fig. 10
b
-13-
ns
Rise Time t
r
-25-
Turn-Off Delay Time t
d(off)
-30-
Fall Time t
f
-22-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--9.2
A
Pulsed Diode Forward Current
a
I
SM
--37
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 9.2 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/μs
b
- 530 800 ns
Body Diode Reverse Recovery Charge Q
rr
-3.04.4μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
