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MJE13003

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1 Publication Order Number:
MJE13003/D
MJE13003
SWITCHMODEt Series NPN
Silicon Power Transistor
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• Reverse Biased SOA with Inductive Loads @ T
C
= 100_C
• Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C
t
c
@ 1 A, 100_C is 290 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO(sus)
400 Vdc
Collector−Emitter Voltage V
CEV
700 Vdc
Emitter Base Voltage V
EBO
9 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
I
CM
1.5
3
Adc
Base Current − Continuous
− Peak (Note 1)
I
B
I
BM
0.75
1.5
Adc
Emitter Current − Continuous
− Peak (Note 1)
I
E
I
EM
2.25
4.5
Adc
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
1.4
11.2
W
mW/_C
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
40
320
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to
+150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.12
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
89
_C/W
Maximum Load Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
275
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJE13003 TO−225 500 Units/Box
1.5 AMPERES
NPN SILICON POWER
TRANSISTORS
300 AND 400 VOLTS
40 WATTS
http://onsemi.com
MJE13003G
TO−225
(Pb−Free)
500 Units/Box
TO−225
CASE 77
STYLE 3
2
1
3
MARKING DIAGRAM
YWW
JE
13003G
Y = Year
WW = Work Week
JE13003 = Device Code
G = Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
MJE13003
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (I
C
= 10 mA, I
B
= 0) V
CEO(sus)
400 − − Vdc
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, T
C
= 100_C)
I
CEV
−
−
−
−
1
5
mAdc
Emitter Cutoff Current (V
EB
= 9 Vdc, I
C
= 0) I
EBO
− − 1 mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with bass forward biased I
S/b
See Figure 11 −
Clamped Inductive SOA with base reverse biased RBSOA See Figure 12 −
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 2 Vdc)
(I
C
= 1 Adc, V
CE
= 2 Vdc)
h
FE
8
5
−
−
40
25
−
Collector−Emitter Saturation Voltage
(I
C
= 0.5 Adc, I
B
= 0.1 Adc)
(I
C
= 1 Adc, I
B
= 0.25 Adc)
(I
C
= 1.5 Adc, I
B
= 0.5 Adc)
(I
C
= 1 Adc, I
B
= 0.25 Adc, T
C
= 100_C)
V
CE(sat)
−
−
−
−
−
−
−
−
0.5
1
3
1
Vdc
Base−Emitter Saturation Voltage
(I
C
= 0.5 Adc, I
B
= 0.1 Adc)
(I
C
= 1 Adc, I
B
= 0.25 Adc)
(I
C
= 1 Adc, I
B
= 0.25 Adc, T
C
= 100_C)
V
BE(sat)
−
−
−
−
−
−
1
1.2
1.1
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (I
C
= 100 mAdc, V
CE
= 10 Vdc, f = 1 MHz) f
T
4 10 − MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) C
ob
− 21 − pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(V
CC
= 125 Vdc, I
C
= 1 A,
I
B1
= I
B2
= 0.2 A, t
p
= 25 ms,
Duty Cycle v 1%)
t
d
− 0.05 0.1
ms
Rise Time t
r
− 0.5 1
ms
Storage Time t
s
− 2 4
ms
Fall Time t
f
− 0.4 0.7
ms
Inductive Load, Clamped (Table 1, Figure 13)
Storage Time
(I
C
= 1 A, V
clamp
= 300 Vdc,
I
B1
= 0.2 A, V
BE(off)
= 5 Vdc, T
C
= 100_C)
t
sv
− 1.7 4
ms
Crossover Time t
c
− 0.29 0.75
ms
Fall Time t
fi
− 0.15 −
ms
2. Pulse Test: PW = 300 ms, Duty Cycle v 2%.
MJE13003
http://onsemi.com
3
C, CAPACITANCE (pF)
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
0.02
I
C
, COLLECTOR CURRENT (AMP)
0.35
0.3
0.2
1.4
I
C
, COLLECTOR CURRENT (AMP)
1.2
1
0.8
0.6
0.02
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
4
0.05 0.1 0.7 2
10
Figure 2. Collector Saturation Region
0.01
I
B
, BASE CURRENT (AMP)
0.02 0.05
1.2
0.4
0
80
h
FE
, DC CURRENT GAIN
V
CE
= 2 V
V
CE
= 5 V
0.1 0.2 0.5 1
Figure 3. Base−Emitter Voltage Figure 4. Collector−Emitter Saturation Region
Figure 5. Collector Cutoff Region
2
0.8
10
4
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
10
−1
0
T
J
= 25°C
T
J
= 150°C
20
0.07 0.3
−0.4
Figure 6. Capacitance
500
V
R
, REVERSE VOLTAGE (VOLTS)
C
ib
0.1
, COLLECTOR CURRENT (A)μI
C
0.05
10
3
10
2
10
1
10
0
−0.2 +0.2 +0.4 +0.6
REVERSE
FORWARD
V
CE
= 250 V
70
10
2 20 500 1000
1.6
0.0050.002
0.4 0
0.1
25°C
−55 °C
0.3 A
I
C
= 0.1 A
T
J
= −55°C
6
0.03
0.2 0.5 1 2
0.03 0.1 0.70.07 20.02 0.05 0.30.2 0.5 1
0.15
0.25
60
40
30
8
1 A
V
BE(sat)
@ I
C
/I
B
= 3
V
BE(on)
@ V
CE
= 2 V
300
200
100
50
5
7
20
30
2001005010510.50.2
150°C
0.03 0.1 0.70.07 20.05 0.30.2 0.5 1
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
I
C
/I
B
= 3
0.5 A 1.5 A
25°C
25°C
C
ob
T
J
= −55°C
25°C
150°C
T
J
= 150°C
125°C
100°C
75°C
50°C
25°C
T
J
= 25°C
P1-P3P4-P6P7-P8

MJE13003

Mfr. #:
Buy MJE13003
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN 400 Volt
Lifecycle:
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