MJE13003

MJE13003
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7
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
1.6
0
800
0.4
100 300
T
J
100°C
I
B1
= 1 A
500 700
V
BE(off)
= 9 V
0
0.8
V
CEV
, COLLECTOR−EMITTER CLAMP VOLTAGE (VOLTS)
1.2
100 ms
10 ms
1.0 ms
dc
5
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.01
10 500
1
0.5
2
0.2
0.0
5
0.02
20 50 100 200
Figure 11. Active Region Safe Operating
Area
T
C
= 25°C
Figure 12. Reverse Bias Safe Operating Area
0.1
300
200 400 600
5 V
1.5 V
5.0ms
10
MJE13003
MJE13003
3 V
THERMAL LIMIT (SINGLE PULSE)
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
CEO
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
Figure 13.
T
J(pk)
may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 12 gives RBSOA characteristics.
T
C
, CASE TEMPERATURE (°C)
0
40 120 160
0.6
POWER DERATING FACTOR
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60 100 14080
THERMAL
DERATING
20
Figure 13. Forward Bias Power Derating
MJE13003
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8
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
−A−
M
K
F
C
Q
H
V
G
S
D
J
R
U
132
2 PL
M
A
M
0.25 (0.010) B
M
M
A
M
0.25 (0.010) B
M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
__
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
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MJE13003

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN 400 Volt
Lifecycle:
New from this manufacturer.
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