OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IDB09E60ATMA1

P1-P3P4-P6P7-P8
IDB09E60
Fast Switching EmCon
Diode
Product Summary
V
RRM
600 V
I
F
9 A
V
F
1.5 V
T
j
max
175 °C
Pin 1 PIN 2 PIN 3
NC C A
Marking
D09E60
Type
Package Ordering Code
IDB09E60 PG-TO263-3 -
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage V
RRM
600 V
Continous forward current
T
C
=25°C
T
C
=90°C
I
F
19.3
13
A
Surge non repetitive forward current
T
C
=25°C, t
p
=10 ms, sine halfwave
I
FSM
40
Maximum repetitive forward current
T
C
=25°C, t
p
limited by T
jmax
, D=0.5
I
FRM
29.5
Power dissipation
T
C
=25°C
T
C
=90°C
P
tot
57.7
32.7
W
Operating and storage temperature T
j
, T
st
g
-55...+175 °C
Soldering temperature
reflow soldering, MSL1
T
S
260 °C
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
Maximum Ratings
Parameter
Symbol
Unit
Repetitive peak reverse voltage
V
RRM
V
Continuous forward current
T
C
= 25C
T
C
= 90C
I
F
A
Surge non repetitive forward current
T
C
= 25C, t
p
= 10 ms, sine halfwave
I
FSM
A
Maximum repetitive forward current
T
C
= 25C, t
p
limited by t
j,max
, D = 0.5
I
FRM
A
Power dissipation
T
C
= 25C
T
C
= 90C
P
tot
W
Operating junction temperature
T
j
°C
Storage temperature
T
stg
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
T
S
1
3
2
• RoHS compliant
Fast Switching Emitter Controlled Diode
600V Emitter Controlled technology
Rev. 2.4 Page 1 2013-12-05
PG-TO263-3
20131205Rev. 2.4
Page 2
IDB09E60
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
thJC
- - 2.6 K/W
Thermal resistance, junction - ambient, leaded R
thJA
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current
V
R
=600V, T
j
=25°C
V
R
=600V, T
j
=150°C
I
R
-
-
-
-
50
750
µA
Forward voltage drop
I
F
=9A, T
j
=25°C
I
F
=9A, T
j
=150°C
V
F
-
-
1.5
1.5
2
-
V
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
20131205Rev.2.4
Page 3
IDB09E60
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=25°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=125°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=150°C
t
rr
-
-
-
75
110
112
-
-
-
ns
Peak reverse current
V
R
=400V, I
F
= 9A, di
F
/dt=800A/µs, T
j
=25°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=125°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=150°C
I
rrm
-
-
-
10.2
11.8
12.3
-
-
-
A
Reverse recovery charge
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=25°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=125°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=150°C
Q
rr
-
-
-
343
585
612
-
-
-
nC
Reverse recovery softness factor
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=25°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=125°C
V
R
=400V, I
F
=9A, di
F
/dt=800A/µs, T
j
=150°C
S
-
-
-
4
5.5
5.7
-
-
-
P1-P3P4-P6P7-P8

IDB09E60ATMA1

Mfr. #:
Buy IDB09E60ATMA1
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 19.3A TO263
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet