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IDB09E60ATMA1

P1-P3P4-P6P7-P8
20131205Rev.2.4
Page 4
IDB09E60
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
≤ 175°C
25 50 75 100 125
°C
175
T
C
0
2
4
6
8
10
12
14
16
A
20
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: T
j
≤ 175 °C
25 50 75 100 125
°C
175
T
C
0
5
10
15
20
25
30
35
40
45
50
W
60
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0 0.5 1 1.5
V
2.5
V
F
0
3
6
9
12
15
18
21
A
27
I
F
-55°C
25°C
100°C
150°C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60 -20 20 60 100
°C
160
T
j
1
1.2
1.4
1.6
V
2
V
F
4,5A
9A
18A
20131205Rev.2.4
Page 5
IDB09E60
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
50
100
150
200
250
ns
350
t
rr
18A
9A
4.5A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125 °C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
300
350
400
450
500
550
600
650
700
nC
800
Q
rr
4.5A
9A
18A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
4
5
6
7
8
9
10
11
12
A
14
I
rr
18A
9A
4.5A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
0
2
4
6
8
10
14
S
18A
9A
4.5A
20131205Rev.2.4
Page 6
IDB09E60
9 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
IDP09E60
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
P1-P3P4-P6P7-P8

IDB09E60ATMA1

Mfr. #:
Buy IDB09E60ATMA1
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 19.3A TO263
Lifecycle:
New from this manufacturer.
Delivery:
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