Nexperia
BUK6Y25-40P
40 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - -40 V
V
GS
gate-source voltage
T
j
= 25 °C
[1] -20 20 V
V
GS
= -10 V; T
mb
= 25 °C - -38 AI
D
drain current
V
GS
= -10 V; T
mb
= 100 °C - -27 A
I
DM
peak drain current single pulse; t
p
≤ 10 µs; T
mb
= 25 °C - -151 A
P
tot
total power dissipation T
mb
= 25 °C - 66 W
T
j
junction temperature -55 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C - -38 A
I
SM
peak source current single pulse; t
p
≤ 10 µs; T
mb
= 25 °C - -151 A
ESD maximum rating
V
ESD
electrostatic discharge
voltage
HBM [2] - 1000 V
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
V
sup
≤ -40 V; V
GS
= -10 V; T
j(init)
= 25 °C;
I
D
= -7.9 A; DUT in avalanche
(unclamped)
- 4.2 mJ
[1] V
GS
= -20 V/+5 V according AEC-Q101 at T
j
= 175 °C; V
GS
= -20 V/+20 V according AEC-Q101 at T
j
= 150 °C
[2] Measured between all pins.
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Nexperia B.V. 2018. All rights reserved
Product data sheet 7 June 2018 3 / 14
