Nexperia
BUK6Y25-40P
40 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
T
j
= 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V -40 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C -1.5 -2 -3 V
V
DS
= -40 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µAI
DSS
drain leakage current
V
DS
= -40 V; V
GS
= 0 V; T
j
= 175 °C - - -100 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= -10 V; I
D
= -7.9 A; T
j
= 25 °C - 18 25 mΩ
V
GS
= -10 V; I
D
= -7.9 A; T
j
= 175 °C - 21 30 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -6.5 A - 25 37 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -2 A; T
j
= 25 °C - 55 - S
R
G
gate resistance f = 1 MHz - 7 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 28 50 nC
Q
GS
gate-source charge - 5.8 - nC
Q
GD
gate-drain charge
V
DS
= -20 V; I
D
= -10 A; V
GS
= -10 V
- 4.8 - nC
C
iss
input capacitance - 1591 - pF
C
oss
output capacitance - 193 - pF
C
rss
reverse transfer
capacitance
V
DS
= -20 V; f = 1 MHz; V
GS
= 0 V
- 114 - pF
t
d(on)
turn-on delay time - 7 - ns
t
r
rise time - 29 - ns
t
d(off)
turn-off delay time - 49 - ns
t
f
fall time
V
DS
= -20 V; I
D
= -7.9 A; V
GS
= -10 V;
R
G(ext)
= 6 Ω
- 22 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -37.6 A; V
GS
= 0 V; T
j
= 25 °C - -0.7 -1.2 V
t
rr
reverse recovery time - 21 - ns
Q
r
recovered charge
I
S
= -7.9 A; dI
S
/dt = 100 A/µs;
V
GS
= 0 V; V
DS
= -20 V; T
j
= 25 °C
- 13 - nC
BUK6Y25-40P All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 7 June 2018 6 / 14
