VS-ST333C04LFM1

VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Feb-17
1
Document Number: 93678
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
International standard case TO-200AB (E-PUK)
High surge current capability
Low thermal impedance
High speed performance
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
Choppers
Induction heating
All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
Package TO-200AB (E-PUK)
Diode variation Single SCR
I
T(AV)
720 A
V
DRM
/V
RRM
400 V, 800 V
V
TM
1.96 V
I
TSM
at 50 Hz 11 000 A
I
TSM
at 60 Hz 11 500 A
I
GT
200 mA
T
C
/T
hs
55 °C
TO-200AB (E-PUK)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
720 A
T
hs
55 °C
I
T(RMS)
1435 A
T
hs
25 °C
I
TSM
50 Hz 11 000
A
60 Hz 11 500
I
2
t
50 Hz 605
kA
2
s
60 Hz 553
V
DRM
/V
RRM
400 to 800 V
t
q
Range 10 to 30 μs
T
J
-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
VS-ST333C..C
04 400 500
50
08 800 900
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Feb-17
2
Document Number: 93678
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 1630 1420 2520 2260 7610 6820
A
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
Recovery voltage V
r
50 50 50
V
Voltage before turn-on V
d
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
Double side (single side) cooled
720 (350) A
55 (75) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 1435
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
11 000
t = 8.3 ms 11 500
t = 10 ms
100 % V
RRM
reapplied
9250
t = 8.3 ms 9700
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
605
kA
2
s
t = 8.3 ms 553
t = 10 ms
100 % V
RRM
reapplied
428
t = 8.3 ms 391
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 6050 kA
2
s
Maximum peak on-state voltage V
TM
I
TM
= 1810 A, T
J
= T
J
maximum, t
p
= 10 ms sine wave pulse 1.96
VLow level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.91
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
= T
J
maximum 0.93
Low level value of forward slope resistance r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.58
m
High level value of forward slope resistance r
t2
(I > x I
T(AV)
), T
J
= T
J
maximum 0.58
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 , I
G
= 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
MIN.
MAX
.
Maximum non-repetitive rate of rise
of turned on current
dI/dt T
J
= T
J
maximum, V
DRM
= Rated V
DRM
; I
TM
= 2 x dI/dt 1000 A/µs
Typical delay time t
d
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5 source
1.1
µs
Maximum turn-off time t
q
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: See table in device code
10 30
180° el
I
TM
180° el
I
TM
100 µs
I
TM
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Feb-17
3
Document Number: 93678
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
500 V/µs
Maximum peak reverse and off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 50 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum, f = 50 Hz, d% = 50
60
W
Maximum average gate power P
G(AV)
10
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
5 ms
10 A
Maximum peak positive gate voltage +V
GM
20
V
Maximum peak negative gate voltage -V
GM
5
Maximum DC gate currrent required to trigger I
GT
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
200 mA
Maximum DC gate voltage required to trigger V
GT
3V
Maximum DC gate current not to trigger I
GD
T
J
= T
J
maximum, rated V
DRM
applied
20 mA
Maximum DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
J
-40 to +125
°C
Maximum storage temperature range T
Stg
-40 to +150
Maximum thermal resistance, junction to heatsink R
thJ-hs
DC operation single side cooled 0.09
K/W
DC operation double side cooled 0.04
Maximum thermal resistance, case to heatsink R
thC-hs
DC operation single side cooled 0.020
DC operation double side cooled 0.010
Mounting force, ± 10 %
9800
(1000)
N
(kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.011 0.007 0.007
T
J
= T
J
maximum K/W
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037

VS-ST333C04LFM1

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 720 Amp 400 Volt 1230 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
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