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VS-ST333C04LFM1

P1-P3P4-P6P7-P9P10-P10
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Feb-17
4
Document Number: 93678
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST333C..C Series
(Single Side Cooled)
R (DC ) = 0 .09 K / W
th J-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30°
60°
90°
120°
180°
A ve rag e O n -sta te C urre n t (A )
Cond uction P eriod
Maximum Allowable Heatsink Tem perature (°C)
ST333C ..C Series
(Sing le Side C oo led)
R ( D C) = 0 .09 K/W
th J-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 2 00 400 600 800 1 00 0
30°
60°
90°
120°
180°
Average O n-state C urrent (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST333 C..C S eries
(D o uble Side C oo le d)
R (D C ) = 0.04 K/W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400 1600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST333C..C Series
( Double Side C ooled )
R (DC) = 0.04 K/W
th J-hs
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 200 400 600 800 1000
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average O n-state C urren t (A)
ST333 C ..C Ser ie s
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
0 200 400 600 800 1000 1200 1400 1600
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
M axim um Average On-state Pow er Loss (W )
Average O n-state C urren t (A)
ST333C ..C Series
T = 125°C
J
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Feb-17
5
Document Number: 93678
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
001011
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At An y Rated L oad C on dition And W ith
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
In it ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST333C..C Series
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. C ontrol
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Initial T = 12 5°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST333C..C Series
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a re W a v e P u ls e D ur a t io n ( s )
thJ-hs
Tran sient Therm al Im peda nce Z (K/W )
ST333C ..C Series
Steady State V alue
R = 0 .0 9 K /W
(Sin gle Side C oo le d)
R = 0 .0 4 K /W
(D o uble Side C o oled)
(D C Operation)
th J - h s
thJ-h s
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
I = 500 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Q rr (µC)
TM
ST333C..C Series
T = 125 °C
J
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
M ax im um Reve rse Rec ove ry C urren t - Irr (A )
Rate O f Fall O f Fo rw ard C urren t - di/d t (A /µs)
I = 5 00 A
300 A
200 A
100 A
50 A
TM
ST333C ..C Series
T = 125 ° C
J
VS-ST333C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Feb-17
6
Document Number: 93678
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
Peak O n-state Current (A)
1000
1500
3000
200
500
5000
ST333C..C Series
Sin usoidal pulse
T = 40°C
C
Snubb er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B a sew idth (µs)
1000
1500
3000
200
500
5000 ST333C ..C Series
Sinusoidal pulse
T = 55°C
C
Snubb er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
200
500
Pulse Basewidth (µs)
Peak On-state Current (A)
ST333C..C Series
Trap ezoidal pulse
T = 40°C
di/dt = 50A/µs
3000
Snubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
C
tp
5000
1E11E21E31E4
50 Hz
400
100
Pulse Basewidth (µs)
1000
1500
2000
200
500
2500
Snubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
DRM
s
s
D
ST333C..C Series
Tr a p ezo i d a l p u lse
T = 55°C
di/dt = 100A /µs
C
3000
5000
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pulse Basew idth (µs)
Pea k O n-sta te Curre nt (A )
ST333C..C Series
Trapezoidal pulse
T = 40°C
d i/dt = 100A/µs
Snubb er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DRM
C
5000
tp
1E1 1E 2 1E3 1E4
50 Hz
400
100
Pulse Basew idth (µs)
1000
1500
2000
200
500
ST333C..C Series
Tr a p ezo id a l p uls e
T = 55°C
di/dt = 100A/µs
C
2500
Snubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
DR M
tp
3000
5000
P1-P3P4-P6P7-P9P10-P10

VS-ST333C04LFM1

Mfr. #:
Buy VS-ST333C04LFM1
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 720 Amp 400 Volt 1230 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
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