OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI1029X-T1-E3

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
Si1029X
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
1
Complementary N- and P-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFETs
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 1.40
P-Channel, 4
• Low Threshold: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(mA)
N-Channel 60
1.40 at V
GS
= 10 V
500
3 at V
GS
= 4.5 V
200
P-Channel - 60
4 at V
GS
= - 10 V
- 500
8 at V
GS
= - 4.5 V
- 25
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Marking Code: H
Top View
3
1
D
2
G
2
S
1
52
4
6
D
1
S
2
G
1
SC-89
Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol
N-Channel P-Channel
Unit 5 s Steady State 5 s Steady State
Drain-Source Voltage
V
DS
60 - 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
320 305 - 200 - 190
mA
T
A
= 85 °C
230 220 - 145 - 135
Pulsed Drain Current
b
I
DM
650 - 650
Continuous Source Current (Diode Conduction)
a
I
S
450 380 - 450 - 380
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
280 250 280 250
mW
T
A
= 85 °C
145 130 145 130
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
www.vishay.com
2
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Vishay Siliconix
Si1029X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 10 µA N-Ch 60
V
V
GS
= 0 V, I
D
= - 10 µA P-Ch - 60
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA N-Ch 1 2.5
V
DS
= V
GS
, I
D
= - 250 µA P-Ch - 1 - 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 5 V
N-Ch ± 50
nA
P-Ch ± 100
V
DS
= 0 V, V
GS
= ± 10 V
N-Ch ± 150
P-Ch ± 200
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 50 V, V
GS
= 0 V N-Ch 10
V
DS
= - 50 V, V
GS
= 0 V P-Ch - 25
V
DS
= 50 V, V
GS
= 0 V, T
J
= 85 °C N-Ch 100
V
DS
= - 50 V, V
GS
= 0 V, T
J
= 85 °C P-Ch - 250
On-State Drain Current
a
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V N-Ch 500
mA
V
DS
= - 10 V, V
GS
= - 4.5 V P-Ch - 50
V
DS
= 7.5 V, V
GS
= - 4.5 V N-Ch 800
V
DS
= - 10 V, V
GS
= - 10 V P-Ch - 600
Drain-Source On-State
Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 200 mA N-Ch 3
V
GS
= - 4.5 V, I
D
= - 25 mA P-Ch 8
V
GS
= 10 V, I
D
= 500 mA N-Ch 1.40
V
GS
= - 10 V, I
D
= - 500 mA P-Ch 4
V
GS
= 10 V, I
D
= 500 mA, T
J
= 125 °C N-Ch 2.50
V
GS
= - 10 V, I
D
= - 500 mA, T
J
= 125 °C P-Ch 6
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 200 mA N-Ch 200
ms
V
DS
= - 10 V, I
D
= - 100 mA P-Ch 100
Diode Forward Voltage
a
V
SD
I
S
= 200 mA, V
GS
= 0 V N-Ch 1.4
V
I
S
= - 200 mA, V
GS
= 0 V P-Ch - 1.4
Dynamic
b
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 250 mA
P-Channel
V
DS
= - 30 V, V
GS
= - 15 V, I
D
= - 500 mA
N-Ch 750
pC
P-Ch 1700
Gate-Source Charge
Q
gs
N-Ch 75
P-Ch 260
Gate-Drain Charge
Q
gd
N-Ch 225
P-Ch 460
Input Capacitance
C
iss
N-Channel
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
N-Ch 30
pF
P-Ch 23
Output Capacitance
C
oss
N-Ch 6
P-Ch 10
Reverse Transfer Capacitance
C
rss
N-Ch 3
P-Ch 5
Tur n - On T im e
c
t
ON
N-Channel
V
DD
= 30 V, R
L
= 150
I
D
200 mA, V
GEN
= 10 V, R
g
= 10
N-Ch 15
ns
P-Ch 20
Turn-Off Time
c
t
OFF
P-Channel
V
DD
= - 25 V, R
L
= 150
I
D
- 165 mA, V
GEN
= - 10 V, R
g
= 10
N-Ch 20
P-Ch 35
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
3
Vishay Siliconix
Si1029X
N-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V thru 7 V
3 V
5 V
4 V
6 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
- On-Resistance (R
DS(on)
)
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
V
DS
= 10 V
I
D
= 250 mA
-
Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
T
J
= - 55 °C
125 °C
25 °C
0
10
20
30
40
50
0 5 10 15 20 25
V
DS
- Drain-to-Source Voltage (V)
C-
Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
f = 1 MHz
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
V
GS
= 10 V at 500 mA
V
GS
= 4.5 V
at 200 mA
(Normalized)
- On-Resistance R
DS(on)
P1-P3P4-P6P7-P9P10-P10

SI1029X-T1-E3

Mfr. #:
Buy SI1029X-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI1029X-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet