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SI1029X-T1-E3
P1-P3
P4-P6
P7-P9
P10-P10
www.vishay.com
4
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Vishay Siliconix
Si1029X
N-CHANNEL TYPICAL CHARAC
TERISTICS
(T
A
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25 °C
T
J
= 125 °C
V
SD
-S
o
u
rce-to-Drain
V
oltage (
V
)
-S
o
u
rce C
u
rrent (A)
I
S
10
T
J
= -
55 °C
V
GS
= 0
V
On-Resistance vs. Gate-to-Source Voltage
0
1
2
3
4
5
0246
8
10
V
GS
-
Gate-to-So
u
rce
V
oltage (
V
)
I
D
= 500 mA
I
D
= 200 mA
-
On-Resistance (
R
DS(on)
)
Threshold Voltage Variance Ove
r Temperature
V
ariance (
V
)
V
GS(th)
-0
.
8
-
0.6
-
0.4
-
0.2
0.0
0.2
0.4
-
50
-
25
0
25
50
75
100
125
150
I
D
= 250
µ
A
T
J
-J
u
nction T
emperat
u
re (°C)
Document Number: 71435
S10-2432-Rev. C, 25-Oct
-10
www.vishay.com
5
Vishay Siliconix
Si1029X
P-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise note
d)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.
8
1.0
012345
V
DS
-
Drain-to-So
u
rce
V
oltage (
V
)
-
Drain C
u
rrent (A)
I
D
V
GS
= 10
V
5
V
4
V
6
V
7
V
8
V
0
4
8
12
16
20
0
200
400
600
8
00
1000
I
-
Drain C
u
rrent (mA)
V
GS
= 4.5
V
V
GS
= 10
V
-
On-Resistance (
R
DS(on)
)
V
GS
= 5
V
D
0
3
6
9
12
15
0.0
0.3
0.6
0.9
1.2
1.5
1.
8
I
D
= 500 mA
-
Gate-to-So
u
rce
V
oltage (
V
)
Q
g
-
T
otal Gate Charge (nC)
V
GS
V
DS
= 30
V
V
DS
= 4
8
V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temp
erature
0
300
600
900
1200
0246
8
10
V
GS
-
Gate-to-So
u
rce
V
oltage (
V
)
-
Drain C
u
rrent (mA)
I
D
T
J
= -
55 °C
125 °C
25 °C
0
8
16
24
32
40
05
1
0
1
5
2
0
2
5
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
C-
Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0
V
0.0
0.3
0.6
0.9
1.2
1.5
1.
8
-
50
-
25
0
25
50
75
100
125
150
T
J
-J
u
nction T
emperat
u
re (°C)
V
GS
= 10
V
at 500 mA
V
GS
= 4.5
V
at 25 mA
(
N
ormalized)
-
On-Resistance
R
DS(on)
www.vishay.com
6
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Vishay Siliconix
Si1029X
P-CHANNEL TYPICAL CHA
RACTERISTICS
(T
A
= 25 °C, unless otherwise no
ted)
Source-Drain Diode Forward Voltage
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25 °C
T
J
= 125 °C
V
SD
-S
o
u
rce-to-Drain
V
oltage (
V
)
-S
o
u
rce C
u
rrent (A)
I
S
10
T
J
= -
55 °C
V
GS
= 0
V
On-Resistance vs. Gate-to-Source Voltage
0
2
4
6
8
10
0246
8
10
V
GS
-
Gate-to-So
u
rce
V
oltage (
V
)
I
D
= 500 mA
I
D
= 200 mA
-
On-Resistance (
R
DS(on)
)
Threshold Voltage Variance Ove
r Temperature
V
ariance (
V
)
V
GS(th)
-
0.3
-
0.2
-
0.1
0.0
0.1
0.2
0.3
0.4
0.5
-
50
-
25
0
25
50
75
100
125
150
I
D
= 250
µ
A
T
J
-J
u
nction T
emperat
u
re (°C)
P1-P3
P4-P6
P7-P9
P10-P10
SI1029X-T1-E3
Mfr. #:
Buy SI1029X-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI1029X-T1-GE3
Lifecycle:
New from this manufacturer.
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SI1029X-T1-GE3
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