AD8131
Rev. B | Page 6 of 20
V
OCM
TO ±OUT SPECIFICATIONS
25°C, V
S
= 5 V, V
OCM
= 2.5 V, G = 2, R
L, dm
= 200 Ω, unless otherwise noted. Refer to Figure 5 and Figure 39 for test setup and label
descriptions. All specifications refer to single-ended input and differential outputs, unless otherwise noted.
Table 4.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth ΔV
OCM
= 600 mV
200
MHz
Slew Rate V
OCM
= 1.5 V to 3.5 V
450
V/μs
DC PERFORMANCE
Input Voltage Range
1.0 to 3.7
V
Input Resistance
30
Input Offset Voltage V
OS, cm
= V
OUT, cm
; V
DIN+
= V
DIN−
= V
OCM
= 2.5 V
±5 ±12 mV
V
OCM
= float
±10
mV
Input Bias Current
0.5
μA
V
OCM
CMRR ΔV
OUT, dm
/ΔV
OCM
; ΔV
OCM
= 2.5 V ±0.5 V
−60
dB
Gain ΔV
OUT, cm
/ΔV
OCM
; ΔV
OCM
= 2.5 V ±1 V 0.985 1 1.015 V/V
POWER SUPPLY
Operating Range
2.7
11 V
Quiescent Current V
DIN+
= V
DIN−
= V
OCM
= 2.5 V 9.25 10.25 11.25 mA
T
MIN
to T
MAX
variation
20
μA/°C
Power Supply Rejection Ratio ΔV
OUT, dm
/ΔV
S
; ΔV
S
= ±0.5 V
−70 −56 dB
OPERATING TEMPERATURE RANGE
−40 +125 °C
AD8131
Rev. B | Page 7 of 20
ABSOLUTE MAXIMUM RATINGS
Table 5.
1
Parameter Rating
Supply Voltage ±5.5 V
V
OCM
±V
S
Internal Power Dissipation 250 mW
Operating Temperature Range −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering 10 sec) 300°C
1
Thermal resistance measured on SEMI standard 4-layer board.
8-lead SOIC: θ
JA
= 121°C/W.
8-lead MSOP: θ
JA
= 142°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only, functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
AMBIENT TEMPERATURE (°C)
–50
0
T
J
= 150°C
2.0
1.5
1.0
MAXIMUM POWER DISSIPATION (W)
8-LEAD SOIC
PACKAGE
–20 10
100 130
8-LEAD
MSOP
PACKAGE
0.5
40 70
01072-044
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
AD8131
Rev. B | Page 8 of 20
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
NC = NO CONNECT
AD8131
1
2
3
45
6
7
8
750Ω 750Ω
1.5kΩ 1.5kΩ
–D
IN
V
OCM
V+
+OUT
+D
IN
NC
V–
–OUT
01072-003
Figure 4. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 −D
IN
Negative Input.
2 V
OCM
Common-Mode Output Voltage. Voltage applied to this pin sets the common-mode output voltage with a ratio of
1:1. For example, 1 V dc on V
OCM
will set the dc bias level on +OUT and −OUT to 1 V.
3 V+ Positive Supply Voltage.
4 +OUT Positive Output. Note: the voltage at −D
IN
is inverted at +OUT.
5 −OUT Negative Output. Note: the voltage at +D
IN
is inverted at −OUT.
6 V− Negative Supply Voltage.
7 NC No Connect.
8 +D
IN
Positive Input.

AD8131ARMZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Differential Amplifiers IC Hi-Speed
Lifecycle:
New from this manufacturer.
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