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PHD9NQ20T,118

P1-P3P4-P6P7-P9P10-P12P13-P13
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters
General purpose switching
Motor control circuits
Off-line switched-mode power
supplies
TV and computer monitor power
supplies
1.4 Quick reference data
PHD9NQ20T
N-channel TrenchMOS standard level FET
Rev. 03 — 16 December 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --200V
I
D
drain current T
mb
=25°C; V
GS
=10V--8.7A
P
tot
total power dissipation T
mb
=25°C --88W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=4.5A;
T
j
=25°C
-300400mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=9A;
V
DS
=160V; T
j
=25°C
-12-nC
PHD9NQ20T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 16 December 2010 2 of 12
NXP Semiconductors
PHD9NQ20T
N-channel TrenchMOS standard level FET
2. Pinning information
[1] It is not possible to make connection to pin 2.
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT428 (DPAK)
2 D drain
[1]
3Ssource
mb D mounting base; connected to drain
3
2
mb
1
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PHD9NQ20T DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 200 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
=20kΩ - 200 V
V
GS
gate-source voltage -30 30 V
I
D
drain current V
GS
=10V; T
mb
=100°C - 6.2 A
V
GS
=10V; T
mb
=25°C - 8.7 A
I
DM
peak drain current pulsed; T
mb
=25°C - 35 A
P
tot
total power dissipation T
mb
=25°C - 88 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 8.7 A
I
SM
peak source current pulsed; T
mb
=25°C - 35 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=7.2A;
V
sup
≤ 25 V; unclamped; t
p
= 100 µs;
R
GS
=50Ω
-93mJ
I
AS
non-repetitive avalanche current V
sup
≤ 25 V; V
GS
=10V; T
j(init)
=25°C;
R
GS
=50Ω; unclamped
-8.7A
P1-P3P4-P6P7-P9P10-P12P13-P13

PHD9NQ20T,118

Mfr. #:
Buy PHD9NQ20T,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
Delivery:
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