ZXTP2008ZTA

SUMMARY
BV
CEO
= -30V : R
SAT
= 24m ; I
C
= -5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation
30V PNP transistor offers low on state losses making it
ideal for use in DC-DC circuits, line switching and
various driving and power management functions.
FEATURES
5.5 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Exceptional gain linearity down to 10mA
Excellent high current gain hold up
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
949
ZXTP2008Z
ISSUE 1 - JUNE 2005
30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
S
O
T
8
9
PINOUT
TOP VIEW
DEVICE REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZXTP2008ZTA
7" 12mm
embossed
1000 units
ORDERING INFORMATION
ZXTP2008Z
ISSUE 1 - JUNE 2005
2
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
-50 V
Collector-emitter voltage BV
CEO
-30 V
Emitter-base voltage BV
EBO
-7 V
Continuous collector current
(a)
I
C
-5.5 A
Peak pulse current I
CM
-20 A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.5
12
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/°C
Operating and storage temperature range T
j
,T
stg
-55 to 150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
(a)
R
JA
83 °C/W
Junction to Ambient
(b)
R
JA
60 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZXTP2008Z
ISSUE 1 - JUNE 2005
3
CHARACTERISTICS

ZXTP2008ZTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 30V PNP Low Sat
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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