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ZXTP2008ZTA

P1-P3P4-P6
ZXTP2008Z
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-50 -70 V I
C
= -100␮A
Collector-emitter breakdown voltage BV
CER
-50 -70 V I
C
=-1␮A, RB <1k⍀
Collector-emitter breakdown voltage BV
CEO
-30 -40 V I
C
= -10mA *
Emitter-base breakdown voltage BV
EBO
-7.0 -8.0 V I
E
= -100␮A
Collector cut-off current I
CBO
<-1 -20
-0.5
nA
␮A
V
CB
= -40V
V
CB
= -40V,T
amb
=100°C
Collector cut-off current I
CER
R<1k⍀
<-1 -20
-0.5
nA
␮A
V
CB
= -40V
V
CB
= -40V,T
amb
=100°C
Emitter cut-off current I
EBO
<-1 -10 nA V
EB
= -6V
Collector-emitter saturation voltage V
CE(SAT)
-25
-35
-55
-55
-130
-40
-55
-80
-80
-175
mV
mV
mV
mV
mV
I
C
= -0.5A, I
B
= -20mA *
I
C
= -1A, I
B
= -100mA *
I
C
= -1A, I
B
= -20mA *
I
C
= -2A, I
B
= -200mA *
I
C
= -5.5A, I
B
=-500mA *
Base-emitter saturation voltage V
BE(SAT)
-970 -1070 mV I
C
= -5.5A, I
B
= -500mA *
Base-emitter turn-on voltage V
BE(ON)
-860 -960 mV I
C
= -5.5A, V
CE
= -1V *
Static forward current transfer ratio h
FE
100
100
70
10
225
200
145
20
300
I
C
= -10mA, V
CE
= -1V *
I
C
= -1A, V
CE
= -1V *
I
C
= -5A, V
CE
= -1V *
I
C
= -20A, V
CE
= -1V *
Transition frequency f
T
110 MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output capacitance C
OBO
83 pF V
CB
= -10V, f = 1MHz *
Switching times t
ON
t
OFF
43
230
ns I
C
= -1A, V
CC
= -10V,
I
B1
=-I
B2
= -100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
ZXTP2008Z
ISSUE 1 - JUNE 2005
5
TYPICAL CHARACTERISTICS
ZXTP2008Z
6
ISSUE 1 - JUNE 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part ofany order or contractor be regarded asa representation relating tothe products or servicesconcerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE OUTLINE PAD LAYOUT DETAILS
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059
b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167
b1 - 0.53 - 0.021 E1 - 2.60 - 0.102
b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118
c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112
D 4.40 4.60 0.173 0.181 - ----
PACKAGE DIMENSIONS
P1-P3P4-P6

ZXTP2008ZTA

Mfr. #:
Buy ZXTP2008ZTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 30V PNP Low Sat
Lifecycle:
New from this manufacturer.
Delivery:
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