Data Sheet HMC1126
Rev. B | Page 3 of 16
ELECTRICAL SPECIFICATIONS
2 GHz TO 10 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 5 V, V
GG
2 = 1.4 V, I
DD
= 65 mA, unless otherwise stated. Adjust V
GG
1 between −2 V to 0 V to achieve I
DD
= 65 mA typical.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 2 10 GHz
GAIN 8 11 dB
Gain Variation Over Temperature 0.002 dB/°C
RETURN LOSS
Input 12 dB
Output 14 dB
OUTPUT
Output Power for 1 dB Compression P1dB 14.5 17.5 dBm
Saturated Output Power P
SAT
21 dBm
Output Third-Order Intercept IP3 Measurement taken at P
OUT
/tone = 10 dBm 31 dBm
NOISE FIGURE 4.5
TOTAL SUPPLY CURRENT I
DD
V
DD
= 4 V, V
DD
= 5 V, V
DD
= 6 V, V
DD
= 7 V, or V
DD
= 8 V 65 mA
10 GHz TO 26 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 5 V, V
GG
2 = 1.4 V, I
DD
= 65 mA, unless otherwise stated. Adjust V
GG
1 between −2 V to 0 V to achieve I
DD
= 65 mA typical.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE
10
GHz
GAIN 8 10.5 dB
Gain Variation Over Temperature 0.005 dB/°C
RETURN LOSS
Input 14 dB
Output 20 dB
OUTPUT
Output Power for 1 dB Compression P1dB 14.5 17.5 dBm
Saturated Output Power P
SAT
21 dBm
Output Third-Order Intercept IP3 Measurement taken at P
OUT
/tone = 10 dBm 28 dBm
NOISE FIGURE 4
TOTAL SUPPLY CURRENT I
DD
V
DD
= 4 V, V
DD
= 5 V, V
DD
= 6 V, V
DD
= 7 V, or V
DD
= 8 V 65 mA
HMC1126 Data Sheet
Rev. B | Page 4 of 16
26 GHz TO 40 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 5 V, V
GG
2 = 1.4 V, I
DD
= 65 mA, unless otherwise stated. Adjust V
GG
1 between −2 V to 0 V to achieve I
DD
= 65 mA typical.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 26 40 GHz
GAIN 8 11 dB
Gain Variation Over Temperature 0.005 dB/°C
RETURN LOSS
Input 20 dB
Output
218
dB
OUTPUT
Output Power for 1 dB Compression P1dB 13 16 dBm
Saturated Output Power P
SAT
20.5 dBm
Output Third-Order Intercept IP3 Measurement taken at P
OUT
/tone = 10 dBm 28 dBm
NOISE FIGURE 4
TOTAL SUPPLY CURRENT I
DD
V
DD
= 4 V, V
DD
= 5 V, V
DD
= 6 V, V
DD
= 7 V, or V
DD
= 8 V 65 mA
40 GHz TO 50 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 5 V, V
GG
2 = 1.4 V, I
DD
= 65 mA, unless otherwise stated. Adjust V
GG
1 between −2 V to 0 V to achieve I
DD
= 65 mA typical.
Table 4.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 40 50 GHz
GAIN 8 10.5 dB
Gain Variation Over Temperature 0.009 dB/°C
RETURN LOSS
Input 12 dB
Output 12 dB
OUTPUT
Output Power for 1 dB Compression P1dB 10 13 dBm
Saturated Output Power P
SAT
18 dBm
Output Third-Order Intercept IP3 Measurement taken at P
OUT
/tone = 10 dBm 24 dBm
NOISE FIGURE 5
TOTAL SUPPLY CURRENT I
DD
V
DD
= 4 V, V
DD
= 5 V, V
DD
= 6 V, V
DD
= 7 V, or V
DD
= 8 V 65 mA
Data Sheet HMC1126
Rev. B | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Rating
Drain Bias Voltage (V
DD
) 8.5 V
Gate Bias Voltage
V
GG
1 −3 V to 0 V
V
GG
2
For V
DD
= 8 V
1
3.6 V
For V
DD
= 7 V 3.0 V
For V
DD
= 6 V >2.0 V
For V
DD
= 4 V to 5 V
>1.2 V
RF Input Power (RFIN) 22 dBm
Channel Temperature 175°C
Continuous Power Dissipation, P
DISS
(T
A
= 85°C, Derate 21.3 mW/°C at 85°C)
1.915 W
Thermal Resistance, R
TH
(Channel to
Bottom of Die)
47°C/W
2
Storage Temperature 65°C to +150°C
Operating Temperature −55°C to +85°C
ESD Sensitivity, Human Body Model (HBM) Class 1A,
passed 250 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
1
I
DD
< 105 mA.
2
Based upon a thermal epoxy of 20 W/°C.

HMC1126-SX

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier 6-50GHz LOW NOISE AMPLIFIER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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