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HMC1126-SX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
HMC1126
Data Sheet
Rev.
B
| P
age
6
of
16
PIN CONFIGURA
TION AND FUNCTION
DESCRIPTI
ONS
3
4
5
1
2
RFO
UT
V
DD
RFIN
V
GG
1
V
GG
2
HMC1126
TOP VIEW
(No
t to
Scal
e)
13083-002
Figure
2. Pad Configuration
Table
6
. P
ad
Funct
ion De
scrip
tions
P
ad
No.
Mnemonic
Descriptio
n
1
RF
IN
R
F I
nput.
This pin is ac
-
coupled and m
atched to 50 Ω.
2
V
DD
P
ow
er Supply
Vo
ltage wit
h Integ
rated
RF Chok
e. C
onnect d
c bias t
o this p
in to pr
ovid
e drain
curre
nt (I
DD
).
3
RFOUT
RF Output.
This pin is ac
-
coupled and matched to 50 Ω.
4
V
GG
2
G
ate Control 2 for Amplifier
. Attach bypas
s capacitors
as sho
wn in
Fig
ure
38
. Fo
r nominal o
perati
on, apply 1
.4
V
to V
GG
2.
5
V
GG
1
G
ate Control
1 for Amplifier
.
Atta
c
h
bypass c
apaci
tors
as sh
own in
F
igure
38
. Adju
st this pin to achieve I
DD
= 65 mA.
Die
B
ottom
GND
Die bottom
must
be conn
ected t
o RF/dc gr
ound
.
Data Sheet
HMC1126
Rev. B | Page 7
of 16
INTERFACE SCHEMATICS
RFI
N
13083-029
Figure 3. RFIN Interface
Schematic
V
DD
13083-03
0
Figure 4. V
DD
Interface Schematic
RFO
UT
13083-031
Figure 5. RFOUT In
terface S
chematic
V
GG
2
13083-
032
Figure 6. V
GG
2 Interface Schematic
V
GG
1
13083-
033
Figure 7. V
GG
1 Interface Schematic
GND
13083-034
Figure 8. GND Interface Schematic
HMC1126
Data Sheet
Rev.
B
| P
age
8
of
16
TYPICAL PERFORMA
NCE
CHARACTERIST
ICS
–40
–30
–20
–10
0
10
20
S1
1
S21
S22
RESPONSE (dB)
FRE
QUENC
Y
(GHz)
0
5
10
15
20
25
30
35
40
45
55
50
13083-003
Figure
9
.
Response (Gain and Return Loss
)
vs. Frequency
–40
–30
–20
–10
0
RET
URN LO
SS (
dB)
FRE
QUENC
Y
(GHz)
0
5
10
15
20
25
30
35
40
45
50
–55°C
+25°
C
+85°
C
13083-004
Figure
10
. Input Return Loss vs.
Frequency at V
arious
Tempera
ture
s
6
8
10
12
14
16
18
GAI
N (d
B)
FRE
QUENC
Y
(GHz)
0
5
10
15
20
25
30
35
40
45
50
4V
5V
6V
7V
8V
13083-005
Figure
11
.
Gain
vs.
Frequency at V
arious
Supply Voltages (V
DD
)
(For V
DD
= 4
V, V
GG
2 = 1.4
V; for V
DD
= 5 V, V
GG
2 =
1.4
V; fo
r V
DD
= 6 V
, V
GG
2 = 2 V
;
for
V
DD
= 7 V, V
GG
2
= 3 V; for V
DD
=8 V, V
GG
2
= 3.6 V)
4
6
8
10
12
14
16
GAI
N (d
B)
FRE
QUENC
Y
(GHz)
0
5
10
15
20
25
30
35
40
45
50
–55°C
+25°
C
+85°
C
13083-006
Figure
12
. Gain vs.
Frequency
at Various
Temperatures
–40
–30
–20
–10
0
RET
URN LO
SS (
dB)
FRE
QUENC
Y
(GHz)
0
5
10
15
20
25
30
35
40
45
50
–55°C
+25°
C
+85°
C
13083-007
Figure
13
. Output Return Loss vs.
Frequency at Vario
us Temperatures
6
8
10
12
14
16
18
65m
A
80m
A
95m
A
105m
A
GAI
N (d
B)
FRE
QUENC
Y
(GHz)
0
5
10
15
20
25
30
35
40
45
50
13083-008
Figure
14
.
Gain
vs.
Frequency at V
arious
Supply
Curren
t
s (I
DD
)
(For V
DD
= 5 V, V
GG
2
= 1.4 V)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
HMC1126-SX
Mfr. #:
Buy HMC1126-SX
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier 6-50GHz LOW NOISE AMPLIFIER
Lifecycle:
New from this manufacturer.
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