ADP3367ARZ

ADP3367
–6–
REV. 0
+
C1
10µF
IN
OUT
LBO
ADP3367
+5V
OUTPUT
R2
10k
LBI
GNDSET SHDN
DROPOUT
STATUS
OUTPUT
DD
V
IN
R1
100k
+
Figure 11. Dropout Status Output
Output Capacitor
An output capacitor is required on the ADP3367 to maintain sta-
bility and also to improve the load transient response. Capacitor
values from 10 µF upwards are recommended. Capacitors larger
than 10 µF will further improve the transient response. Tantalum
or aluminum electrolytics are suitable for most applications. For
temperatures below about –25°C, solid tantalums should be used
as many aluminum electrolytes freeze at this temperature.
Quiescent Current Considerations
The ADP3367 uses a PNP output stage to achieve low dropout
voltages combined with high output current capability. Under
normal regulating conditions the quiescent current is extremely
low. However if the input voltage drops so that it is below the
desired output voltage, the quiescent current increases consider-
ably. This happens because regulation can no longer be main-
tained and large base current flows in the PNP output transistor
in an attempt to hold it fully on. For minimum quiescent cur-
rent, it is therefore important that the input voltage is main-
tained higher than the desired output level. If the device is being
powered using a battery that can discharge down below the rec-
ommended level, there are a couple of techniques that can be
applied to reduce the quiescent current, but at the expense of
dropout voltage. The first of these is illustrated in Figure 12. By
connecting DD to SHDN the regulator is partially disabled with
input voltages below the desired output voltage and therefore
the quiescent current is reduced considerably.
+
C1
10µF
IN OUT
ADP3367
+5V
OUTPUT
GNDSET SHDN
DD
V
IN
R1
47k
+
C2
0.1µF
Figure 12. IQ Reduction 1
Another technique for reducing the quiescent current near drop-
out is illustrated in Figure 13. The DD output is used to modify
the output voltage so that as V
IN
drops, the desired output volt-
age setpoint also drops. This technique only works when exter-
nal resistors are used to set the output voltage. With V
IN
greater
than V
OUT
, DD has no effect. As V
IN
reduces and dropout is
reached, the DD output starts sourcing current into the SET
input through R3. This increases the SET voltage so that the
regulator feedback loop does not drive the internal PNP transis-
tor as hard as it otherwise would. As the input voltage continues
to decrease, more current is sourced, thereby reducing the PNP
drive even further. The advantage of this scheme is that it main-
tains a low quiescent current down to very low values of V
IN
at
which point the batteries are well outside their useful operating
range. The output voltage tracks the input voltage minus the
dropout. The SHDN function is also unaffected and may be
used normally if desired.
+
C1
10µF
IN OUT
ADP3367
+5V
OUTPUT
GND
SET
SHDN
DD
R1
610k
R2
2M
R3
1M
+
V
IN
QUIESCENT CURRENT BELOW DROPOUT
0
1623 5
400
200
900
1mA
800
700
600
500µA
300
100
4
1.2mA
900µA
V
IN
– V
GROUND PIN CURRENT
Figure 13. IQ Reduction 2
POWER DISSIPATION
The ADP3367 can supply currents up to 300 mA and can oper-
ate with input voltages as high as 16.5 V, but not simultaneously.
It is important that the power dissipation and hence the internal
die temperature be maintained below the maximum limits. Power
Dissipation is the product of the voltage differential across the
regulator times the current being supplied to the load. The
maximum package power dissipation is given in the Absolute
Maximum Ratings. In order to avoid excessive die temperatures,
these ratings must be strictly observed.
P
D
= (V
IN
– V
OUT
) (I
L
)
The die temperature is dependent on both the ambient tempera-
ture and on the power being dissipated by the device. The inter-
nal die temperature must not exceed 125°C. Therefore, care
must be taken to ensure that, under normal operating condi-
tions, the die temperature is kept below the thermal limit.
T
J
= T
A
+ P
D
(
θ
JA
)
A
ADP3367
REV. 0
–7–
This may be expressed in terms of power dissipation as follows:
P
D
= (T
J
T
A
)/(
θ
JA
)
where:
T
J
= Die Junction Temperature (°C)
T
A
= Ambient Temperature (°C)
P
D
= Power Dissipation (W)
θ
JA
= Junction to Ambient Thermal Resistance (°C/W)
If the device is being operated at the maximum permitted ambi-
ent temperature of 85°C, the maximum power dissipation per-
mitted is:
P
D
(max) = (T
J
(max) – T
A
)/(
θ
JA
)
P
D
(max) = (125 – 85)/(θ
JA
)
= 40/
θ
JA
where:
θ
JA
= 98°C/W for the 8-pin SOIC (R-8) package
Therefore, for a maximum ambient temperature of 85°C
P
D
(max) = 408 mW for R-8
At lower ambient temperatures the maximum permitted power
dissipation increases accordingly up to the maximum limits
specified in the absolute maximum specifications.
The thermal impedance (θ
JA
) figures given are measured in still
air conditions and are reduced considerably where fan assisted
cooling is employed. Other techniques for reducing the thermal
impedance include large contact pads on the printed circuit
board and wide traces. The copper will act as a heat exchanger
thereby reducing the effective thermal impedance.
POWER DISSIPATION
Low Thermal Resistance Package
The ADP3367 utilizes a patented and proprietary Thermal
Coastline Leadframe which offers significantly lower resistance
to heat flow from die to the PC board.
Heat generated on the die is removed and transferred to the PC
board faster resulting in lower die temperature than standard
packages. Table II is a performance comparison between and
standard and Thermal Coastline package.
Table I. Thermal Resistance Performance Comparison*
Standard Package (SO-8) Thermal Coastline Package
θ
JC
44°C/W 40°C/W
θ
JA
170°C/W 98°C/W
PD 235 mW 408 mW
*Data presented in Table II is obtained using SEMI Standard Method G38-47
and SEMI Standard Specification G42-88.
A device operating at room temperature, +25°C, and +125°C
junction temperature can dissipate 1.15 W.
To maintain this high level of heat removal efficiency, once heat
is removed from the die to the PC board, it should be dissipated
to the air or other mediums to maintain the largest possible tem-
perature differential between the die and PC board; remember,
the rate at which heat is transferred is directly proportional to
the temperature differential.
Various PC board layout techniques could be used to remove
the heat from the immediate vicinity of the package. Consider
the following issues when designing a board layout:
1. PC board traces with larger copper cross section areas will
remove more heat; use PCs with thicker copper and/or wider
traces.
2. Increase the surface area exposed to open air so heat can be
removed by convection or forced air flow.
3. Use larger masses such as heat sinks or thermally conductive
enclosures to distribute and dissipate the heat.
4. Do not solder mask or silk screen the heat dissipating traces;
black anodizing will significantly improve heat dissipation by
means of increased radiation.
High Power Dissipation Recommendations
Where excessive power dissipation due to high input-output
differential voltages and/or high current conditions exists, the
simplest method of reducing the power requirements on the
regulator is to use a series dropper resistor. In this way the
excess power can be dissipated in the external resistor. As an
example, consider an input voltage of +12 V and an output
voltage requirement of +5 V @ 100 mA with an ambient tem-
perature of +85°C. The package power dissipation under these
conditions is 700 mW which exceeds the maximum ratings. By
using a dropper resistor to drop 4 V, the power dissipation
requirement for the regulator is reduced to 300 mW which is
within the maximum specifications for the SO-8 package at
85°C. The resistor value is calculated as R = 4/0.1 = 40.A
resistor power rating of 1/2 W or greater may be used.
IN
OUT
GNDSET SHDN
ADP3367
+5V
OUTPUT
C2
10µF
+
40
0.5W
C1
1µF
V
IN
12V
+
Figure 14. Reducing Regulator Power Dissipation
Transient Response
The ADP3367 exhibits excellent transient performance as illus-
trated in the “Typical Performance Characteristics.” Figure 6
shows that an input step from 10 V to 6 V results in a very small
output disturbance (50 mV). Adding an input capacitor would
improve this even more.
Figure 7 shows how quickly the regulator recovers from an out-
put load change from 10 mA to 100 mA. The offset due to the
load current change is less than 1 mV.
Monitored µP Power Supply
Figure 15 shows the ADP3367 being used in a monitored µP
supply application. The ADP3367 supplies +5 V for the micro-
A
ADP3367
OUTLINE DIMENSIONS
Figure 16. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Model
1
Temperature Range Output Voltage (V) Package Description Package Option
ADP3367ARZ –40°C to +85°C 5 V/Adjustable R-8 8-Lead SOIC_N
ADP3367ARZ
-REEL7 –40°C to +85°C 5 V/Adjustable R-8 8-Lead SOIC_N
1
Z = RoHS Compliant Part.
REVISION HISTORY
2/14—Rev. 0 to Rev. A
Updated Outline Dimensions .......................................................... 8
Changes to Ordering Guide ............................................................. 8
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-AA
012407-A
0.25 (0.0098)
0.17 (0.0067)
1.27 (0.0500)
0.40 (0.0157)
0.50 (0.0196)
0.25 (0.0099)
45°
1.75 (0.0688)
1.35 (0.0532)
SEATING
PLANE
0.25 (0.0098)
0.10 (0.0040)
4
1
85
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
1.27 (0.0500)
BSC
6.20 (0.2441)
5.80 (0.2284)
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
©2014 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D02083-0-2/14(A)
--8--
REV. A

ADP3367ARZ

Mfr. #:
Manufacturer:
Description:
Linear Voltage Regulators 5V Fixed Adj LDO
Lifecycle:
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