BSP612PH6327XTSA1

P1-P3 P4-P6 P7-P9

BSP612P

OptiMOS™-P Small-Signal-Transistor

Features

• P-channel

• Enhancement mode

• Logic level (4.5V rated)

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to AEC61249-2-21

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

A

=25 °C

-3.0 A

T

A

=70 °C

-2.44

Pulsed drain current

I

D,pulse

T

A

=25 °C

-12

Avalanche energy, single pulse

E

AS

I

D

=-3 A,

V

DD

=-25V,

R

GS

= 25Ω

150 mJ

Reverse diode dv/dt dv /dt

I

D

=-3 A, V

DS

=-48 V,

di/dt=200 A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

1)

P

tot

T

A

=25 °C

W

Operating and storage temperature

T

j

, T

stg

-55 ... 150 °C

ESD Class

JESD22-A114 -HBM 1C V

Soldering Temperature 260 °C °C

IEC climatic category; DIN IEC 68-1 55/150/56 °C

Value

1.8

Type

Package

Tape and Reel Information

Marking

Halogen Free

Packing

BSS612P

SOT223

H6327: 1000 pcs/ reel

BSP612P

Yes

Non dry

PG-SOT-223

V

DS

-60

V

R

DS(on),max

V

GS

=10 V

120

mW

V

GS

=4.5 V

170

I

D

-3

A

Product Summary

Rev 2.0 page 1 2015-10-07

BSP612P

OptiMOS™-P Small-Signal-Transistor

Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance,

junction - soldering point (Pin 4)

R

thJS

25

Thermal resistance,

junction - ambient

R

thJA

minimal footprint 100

Thermal resistance,

junction - ambient

R

thJA

6 cm

2

cooling area

1)

- - 70

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=-250 µA

- - -60 V

Gate threshold voltage

V

GS(th)

V

DS

=0 V, I

D

=-1 mA

-2.0 -1.5 -1.0

Drain-source leakage current

I

DSS

V

DS

=-60V, V

GS

=0 V,

T

j

=25 °C

- - -40 nA

V

DS

=-60V, V

GS

=0V,

T

j

=150 °C

- - -20

mA

Gate-source leakage current

I

GSS

V

GS

=-20V, V

DS

=0V

- - -100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=-4.5 V, I

D

=-2.3 A

- 140 170

mW

V

GS

=-10 V, I

D

=-3 A

- 101 120

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=2.44 A

4.6 - S

Values

1)

Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain

connection. PCB is vertical in still air.

K/W

Rev 2.0 page 2 2015-10-07

BSP612P

OptiMOS™-P Small-Signal-Transistor

Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

2)

Input capacitance

C

iss

- 814 1083 pF

Output capacitance

C

oss

- 248 330

Reverse transfer capacitance

C

rss

- 109 163

Turn-on delay time

t

d(on)

- 8.3 12.5 ns

Rise time

t

r

- 10.4 15.6

Turn-off delay time

t

d(off)

- 43.2 64.8

Fall time

t

f

- 11.3 17.0

Gate Charge Characteristics

2)

Gate to source charge

Q

gs

- -2.42 -3.2 nC

Gate to drain charge

Q

gd

- -10.1 -15.2

Gate charge total

Q

g

- -26.3 -39.4

Gate plateau voltage

V

plateau

- -3.1 - V

Reverse Diode

Diode continous forward current

I

S

- - -3.0 A

Diode pulse current

I

S,pulse

- - -12

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=-3 A,

- 0.80 1.1 V

Reverse recovery time

2)

t

rr

- 44.8 67.2 ns

Reverse recovery charge

2)

Q

rr

- 62.9 94.4 nC

2)

Defined by design. Not subjected to production test

V

R

=-30 V, I

F

=-3 A,

di

F

/dt=100 A/µs

T

A

=25 °C

Values

V

GS

=0 V, V

DS

=-25 V,

f=1 MHz

V

DD

=-30 V, V

GS

=-

10 V, I

D

=-3 A,

R

G,ext

=2.7 W

V

DD

=-48 V, I

D

=-3 A,

V

GS

=0 to -10 V

Rev 2.0 page 3 2015-10-07

P1-P3 P4-P6 P7-P9

BSP612PH6327XTSA1

Mfr. #:

Buy BSP612PH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET

Lifecycle:

New from this manufacturer.

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BSP612PH6327XTSA1