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BSP612PH6327XTSA1

P1-P3P4-P6P7-P9
BSP612P
1 Power dissipation 2 Drain current
P
tot
=f(T
A
) I
D
=f(T
A
); V
GS
≤-10 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 °C; D=0 Z
thJA
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
100 µs
10 ms
1 ms
DC
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
I
D
[A]
V
DS
[V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
Z
thJA
[K/W]
t
p
[s]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 40 80 120 160
P
tot
[W]
T
A
[°C]
0
0.5
1
1.5
2
2.5
3
3.5
0 40 80 120 160
I
D
[A]
T
A
[°C]
Rev 2.0 page 4 2015-10-07
BSP612P
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
0
2
4
6
8
10
0 2 4 6 8
g
fs
[S]
I
D
[A]
3.5 V
4 V
4.5 V
5 V
6 V
10 V
0
5
10
15
20
0 1 2 3 4 5 6
I
D
[A]
V
DS
[V]
25 °C
125 °C
0
1
2
3
4
0 1 2 3 4
I
D
[A]
V
GS
[V]
6 V
5 V
10 V
3.5 V
4 V
4.5 V
0
50
100
150
200
250
0 1 2 3 4 5 6
R
DS(on)
[mW]
I
D
[A]
Rev 2.0 page 5 2015-10-07
BSP612P
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=-3 A; V
GS
=-10 V V
GS(th)
=f(T
j
); V
DS
=V
GS
; I
D
=-1 mA
parameter: I
D
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz; T
j
=25°C I
F
=f(V
SD
)
parameter: T
j
typ
max
0
80
160
240
-60 -20 20 60 100 140
R
DS(on)
[mW]
T
j
[°C]
typ
max
2min
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-60 -20 20 60 100 140
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
0 20 40 60
C [pF]
V
DS
[V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
-3
10
-2
10
-1
10
0
10
1
0 0.4 0.8 1.2 1.6 2
I
F
[A]
V
SD
[V]
Rev 2.0 page 6 2015-10-07
P1-P3P4-P6P7-P9

BSP612PH6327XTSA1

Mfr. #:
Buy BSP612PH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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