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CY7C1021CV33-15ZXC

P1-P3P4-P6P7-P9P10-P12P13-P14
CY7C1021CV33
Document Number: 38-05132 Rev. *I Page 4 of 14
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
CC
Relative to GND
[3]
.....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[3]
......................................–0.5V to V
CC
+0.5V
DC Input Voltage
[3]
..................................–0.5V to V
CC
+0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch Up Current.....................................................>200 mA
Operating Range
Range
Ambient
Temperature (T
A
)
V
CC
Commercial 0°C to +70°C 3.3V ± 10%
Industrial –40°C to +85°C
Automotive-A –40°C to +85°C
Automotive -E –40°C to +125°C
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
-8 -10 -12 -15
Unit
Min Max Min Max Min Max Min Max
V
OH
Output HIGH Voltage V
CC
= Min,
I
OH
= –4.0 mA
2.4 2.4 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min,
I
OL
= 8.0 mA
0.4 0.4 0.4 0.4 V
V
IH
Input HIGH
Voltage
2.0 V
CC
+ 0.3
2.0 V
CC
+ 0.3
2.0 V
CC
+ 0.3
2.0 V
CC
+ 0.3
V
V
IL
Input LOW Voltage
[3]
–0.3 0.8 –0.3 0.8 –0.3 0.8 –0.3 0.8 V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
Commercial –1 +1 –1 +1 –1 +1 –1 +1 μA
Industrial –1 +1 –1 +1
Automotive-A –1 +1 –1 +1
Automotive-E –12 +12
I
OZ
Output Leakage
Current
GND < V
I
< V
CC
,
Output disabled
Commercial –1 +1 –1 +1 –1 +1 –1 +1 μA
Industrial –1 +1 –1 +1
Automotive-A –1 +1 –1 +1
Automotive-E –12 +12
I
CC
V
CC
Operating
Supply Current
V
CC
= Max,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Commercial 95 90 85 80 mA
Industrial 90 85
Automotive-A 90 80
Automotive-E 90
I
SB1
Automatic CE Power
Down Current —TTL
Inputs
Max V
CC
,
CE
> V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Commercial 15 15 15 15 mA
Industrial 15 15
Automotive-A 15 15
Automotive-E 20
I
SB2
Automatic CE Power
Down Current —
CMOS Inputs
Max V
CC
,
CE
> V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Commercial 5 5 5 5 mA
Industrial 5 5
Automotive-A 5 5
Automotive-E 10
Note
3. V
IL
(min) = –2.0V and V
IH
(max) = V
CC
+ 0.5V for pulse durations of less than 20 ns.
[+] Feedback
CY7C1021CV33
Document Number: 38-05132 Rev. *I Page 5 of 14
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V 8 pF
C
OUT
Output Capacitance 8pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions SOJ TSOP II FBGA Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
65.06 76.92 95.32 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
34.21 15.86 10.68 °C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
[4]
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
3.3V
OUTPUT
30 pF*
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
(b)
R 317Ω
R2
351Ω
Rise Time: 1 V/ns
Fall Time: 1 V/ns
30 pF*
OUTPUT
Z = 50
Ω
50Ω
1.5V
(c)
(a)
3.3V
OUTPUT
5 pF
(d)
R 317Ω
R2
351Ω
8-ns devices:
10-, 12-, 15-ns devices:
High-Z characteristics:
Note
4. AC characteristics (except High-Z) for all 8-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown
in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
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CY7C1021CV33
Document Number: 38-05132 Rev. *I Page 6 of 14
Switching Characteristics
Over the Operating Range
[5]
Parameter Description
-8 -10 -12 -15
Unit
Min Max Min Max Min Max Min Max
Read Cycle
t
power
[6]
V
CC
(Typical) to the First Access 100 100 100 100 μs
t
RC
Read Cycle Time 8 10 12 15 ns
t
AA
Address to Data Valid 8 10 12 15 ns
t
OHA
Data Hold from Address Change3333ns
t
ACE
CE LOW to Data Valid 8 10 12 15 ns
t
DOE
OE LOW to Data Valid 5567ns
t
LZOE
OE LOW to Low Z
[7]
0000ns
t
HZOE
OE HIGH to High Z
[7, 8]
4567ns
t
LZCE
CE LOW to Low Z
[7]
3333ns
t
HZCE
CE HIGH to High Z
[7, 8]
4567ns
t
PU
[9]
CE LOW to Power Up0000ns
t
PD
[9]
CE HIGH to Power Down 8 10 12 15 ns
t
DBE
Byte Enable to Data Valid 5567ns
t
LZBE
Byte Enable to Low Z0000ns
t
HZBE
Byte Disable to High Z 4567ns
Write Cycle
[10]
t
WC
Write Cycle Time 8 10 12 15 ns
t
SCE
CE LOW to Write End 7 8 9 10 ns
t
AW
Address Setup to Write End 7 8 9 10 ns
t
HA
Address Hold from Write End0000ns
t
SA
Address Setup to Write Start0000ns
t
PWE
WE Pulse Width 6 7 8 10 ns
t
SD
Data Setup to Write End5568ns
t
HD
Data Hold from Write End0000ns
t
LZWE
WE HIGH to Low Z
[7]
3333ns
t
HZWE
WE LOW to High Z
[7, 8]
4567ns
t
BW
Byte Enable to End of Write6789ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V.
6. t
POWER
gives the minimum amount of time that the power supply is at typical V
CC
values until the first memory access is performed.
7. At any temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. t
HZOE
, t
HZBE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (d) of “AC Test Loads and Waveforms” on page 5. Transition is measured ±500
mV from steady state voltage.
9. This parameter is guaranteed by design and is not tested.
10. The internal write time of the memory is defined by the overlap of CE
LOW, WE LOW, and BHE/BLE LOW. CE, WE, and BHE/BLE is LOW to initiate a write. The
transition of these signals terminate the write. The input data setup and hold timing is referenced to the leading edge of the signal that terminates the write.
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P1-P3P4-P6P7-P9P10-P12P13-P14

CY7C1021CV33-15ZXC

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Buy CY7C1021CV33-15ZXC
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 1M PARALLEL 44TSOP II
Lifecycle:
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