IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 90368
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Advanced process technology
• Surface mount
• Low-profile through-hole (IRFZ34L, SiHFZ34L)
• 175 °C operating temperature
• Fast switching
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available
for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, Starting T
J
= 25 °C, L = 260 μH, R
g
= 25 , I
AS
= 30 A (see fig. 12).
c. I
SD
30 A, dI/dt 200 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34, SiHFZ34 data and test conditions.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
()V
GS
= 10 V 0.050
Q
g
(Max.) (nC) 46
Q
gs
(nC) 11
Q
gd
(nC) 22
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and halogen-free SiHFZ34S-GE3 SiHFZ34STRL-GE3 SiHFZ34L-GE3
Lead (Pb)-free IRFZ34SPbF IRFZ34STRLPbF
a
IRFZ34LPbF
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
30
AT
C
= 100 °C 21
Pulsed Drain Current
a, e
I
DM
120
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
200 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
88
W
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c, e
dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
