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NCP5109BMNTWG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NCP5109A, NCP5109B
www.onsemi.com
16
APPLICATION INFORMATION
Negative Voltage Safe Operating Area
When the driver is used in a half bridge configuration, it
is possible to see negative voltage appearing on the bridge
pin (pin 6) during the power MOSFETs transitions. When
the high−side MOSFET is switched off, the body diode of
the low−side MOSFET starts to conduct. The negative
voltage applied to the bridge pin thus corresponds to the
forward voltage of the body diode. However, as pcb copper
tracks and wire bonding introduce stray elements
(inductance and capacitor), the maximum negative voltage
of the bridge pin will combine the forward voltage and the
oscillations created by the parasitic elements. As any
CMOS device, the deep negative voltage of a selected pin
can inject carriers into the substrate, leading to an erratic
behavior of the concerned component. ON Semiconductor
provides characterization data of its half−bridge driver to
show the maximum negative voltage the driver can safely
operate with. To prevent the negative injection, it is the
designer duty to verify that the amount of negative voltage
pertinent to his/her application does not exceed the
characterization curve we provide, including some safety
margin.
In order to estimate the maximum negative voltage
accepted by the driver, this parameter has been
characterized over full the temperature range of the
component. A test fixture has been developed in which we
purposely negatively bias the bridge pin during the
freewheel period of a buck converter. When the upper gate
voltage shows signs of an erratic behavior, we consider the
limit has been reached.
Figure 50 (or 51), illustrates the negative voltage safe
operating area. Its interpretation is as follows: assume a
negative 10 V pulse featuring a 100 ns width is applied on
the bridge pin, the driver will work correctly over the whole
die temperature range. Should the pulse swing to −20 V,
keeping the same width of 100 ns, the driver will not work
properly or will be damaged for temperatures below
125°C.
Summary:
• If the negative pulse characteristic (negative voltage
level & pulse width) is above the curves the driver
runs in safe operating area.
• If the negative pulse characteristic (negative voltage
level & pulse width) is below one or all curves the
driver will NOT run in safe operating area.
Note, each curve of the Figure 50 (or 51) represents the
negative voltage and width level where the driver starts to
fail at the corresponding die temperature.
If in the application the bridge pin is too close of the safe
operating limit, it is possible to limit the negative voltage
to the bridge pin by inserting one resistor and one diode as
follows:
U1
NCP5109A
VCC
1
IN_HI
2
IN_LO
3
GND
4
DRV_LO
5
BRIDGE
6
DRV_HI
7
VBOOT
8
D1
MUR160
R1
10R
D2
MUR160
C1
100n
M1
M2
Vbulk
0
IN_Hi
IN_LO
0
Vcc
Figure 52. R1 and D1 Improves the Robustness of the
Driver
R1 and D1 should be placed as close as possible of the
driver. D1 should be connected directly between the bridge
pin (pin 6) and the ground pin (pin 4). By this way the
negative voltage applied to the bridge pin will be limited
by D1 and R1 and will prevent any wrong behavior.
ORDERING INFORMATION
Device Package Shipping
†
NCP5109ADR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel
NCP5109BDR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel
NCP5109AMNTWG DFN10 (Pb−Free) 3000 / Tape & Reel
NCP5109BMNTWG DFN10 (Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NCP5109A, NCP5109B
www.onsemi.com
17
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
SEATING
PLANE
1
4
58
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
−X−
−Y−
G
M
Y
M
0.25 (0.010)
−Z−
Y
M
0.25 (0.010) Z
S
X
S
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒ
mm
inches
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NCP5109A, NCP5109B
www.onsemi.com
18
PACKAGE DIMENSIONS
DFN10 3x3, 0.5P
CASE 506DH
ISSUE O
10X
SEATING
PLANE
L
D
E
0.10 C
A
A1
e
D2
E2
b
1
5
10 6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM THE
TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG
SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30
MICRONS ONTO BOTTOM SURFACE OF TERMINAL.
6. FOR DEVICE OPN CONTAINING W OPTION, DETAIL A ALTER-
NATE CONSTRUCTION A−2 AND DETAIL B ALTERNATE CON-
STRUCTION B−2 ARE NOT APPLICABLE.
B
A
0.10 C
TOP VIEW
SIDE VIEW
BOTTOM VIEW
PIN ONE
REFERENCE
0.10 C
0.05 C
(A3)
C
10X
10X
0.10 C
0.05 C
A B
K
DIM MIN MAX
MILLIMETERS
A 0.80 1.00
A1 0.00 0.05
A3 0.20 REF
b 0.20 0.30
D 3.00 BSC
D2 2.40 2.60
E 3.00 BSC
E2 1.50 1.70
e 0.50 BSC
L 0.35 0.45
L1 0.00 0.05
DETAIL A
2X
2X
DETAIL B
*For additional information on our Pb−Free strategy and solderin
g
details, please download the ON Semiconductor Soldering an
d
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
3.30
0.50
0.58
10X
DIMENSIONS: MILLIMETERS
0.30
2.66
PITCH
0.94
10X
1
PACKAGE
OUTLINE
RECOMMENDED
NOTE 4
K 0.30 −−−
0.10 C A
BB
0.10 C ABB
E3
L1
DETAIL A
L
ALTERNATE TERMINAL
CONSTRUCTIONS
L
DETAIL B
MOLD CMPDEXPOSED Cu
ALTERNATE
CONSTRUCTIONS
A1
A3
ALTERNATE A−1 ALTERNATE A−2
ALTERNATE B−1 ALTERNATE B−2
E3 0.10 BSC
NOTE 3
1.80
A1
A
DETAIL B
WETTABLE FLANK
CONSTRUCTION
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent− Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or
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damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action
Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NCP5109/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your lo
cal
Sales Representative
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P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

NCP5109BMNTWG

Mfr. #:
Buy NCP5109BMNTWG
Manufacturer:
ON Semiconductor
Description:
Gate Drivers HIGH VOLT MOSFET DRIVER O
Lifecycle:
New from this manufacturer.
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