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VS-8ETL06-1PBF

P1-P3P4-P6P7-P9
VS-8ETL06SPbF, VS-8ETL06-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Nov-16
1
Document Number: 94029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultralow V
F
Hyperfast Rectifier for Discontinuous Mode PFC,
8 A FRED Pt
®
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
State of the art, ultralow V
F
, soft-switching hyperfast
rectifiers optimized for discontinuous (critical) mode (DCM)
power factor correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
8 A
V
R
600 V
V
F
at I
F
0.81 V
t
rr
typ. 60 ns
T
J
max. 175 °C
Diode variation Single die
TO-262AATO-263AB (D
2
PAK)
Anode
1
3
Base
cathode
2
N/C
Anode
1
3
2
N/C
V
S-8ETL06SPbF
VS-8ETL06-1PbF
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 160 °C 8
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 175
Peak repetitive forward current I
FM
16
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 8 A - 0.96 1.05
I
F
= 8 A, T
J
= 150 °C - 0.81 0.86
Reverse leakage current I
R
V
R
= V
R
rated - 0.05 5
μA
T
J
= 150 °C, V
R
= V
R
rated - 20 100
Junction capacitance C
T
V
R
= 600 V - 17 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-8ETL06SPbF, VS-8ETL06-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Nov-16
2
Document Number: 94029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 60 100
ns
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 150 250
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
- 170 -
T
J
= 125 °C - 250 -
Peak recovery current I
RRM
T
J
= 25 °C - 15 -
A
T
J
= 125 °C - 20 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 1.3 -
μC
T
J
= 125 °C - 2.6 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.42
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style TO-263AB (D
2
PAK) 8ETL06S
Case style TO-262 8ETL06-1
VS-8ETL06SPbF, VS-8ETL06-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Nov-16
3
Document Number: 94029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
0.1
1
10
100
I
F
- Instantaneous Forward
Current (A)
V
F
- Forward Voltage Drop (V)
1.6
2.0
1.20.80.4
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0.01
0.1
1
10
100
200 400
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (μA)
300100
0.001
600500
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 75 °C
T
J
= 100 °C
T
J
= 125 °C
100
0 200 400 500 600
10
V
R
- Reverse Voltage (V)
C
T
-
Junction Capacitance
(pF)
300100
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P9

VS-8ETL06-1PBF

Mfr. #:
Buy VS-8ETL06-1PBF
Manufacturer:
Vishay
Description:
Rectifiers 8.0 Amp 600 Volt 170ns
Lifecycle:
New from this manufacturer.
Delivery:
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