OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-8ETL06-1PBF

P1-P3P4-P6P7-P9
VS-8ETL06SPbF, VS-8ETL06-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Nov-16
4
Document Number: 94029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
02 6 10 14
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
150
160
48
165
170
175
180
155
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
12
02 6 1012
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
4
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
48
8
12
10
6
2
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
450
0
I
F
= 16 A
I
F
= 8 A
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
400
300
200
100
50
150
250
350
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
1000
4000
3000
2000
1500
5000
3500
2500
4500
I
F
= 16 A
I
F
= 8 A
500
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
VS-8ETL06SPbF, VS-8ETL06-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Nov-16
5
Document Number: 94029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-8ETL06SPbF, VS-8ETL06-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 15-Nov-16
6
Document Number: 94029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
2
- Current rating (8 A)
3
- E = single diode
4 - T = TO-220, D
2
PAK
5
- L = ultralow V
F
hyperfast recovery
6
- Voltage rating (06 = 600 V)
- PbF = lead (Pb)-free
7
-
S = D
2
PAK
-1 = TO-262
8
-
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D
2
PAK package)
TRR = tape and reel (right oriented, for D
2
PAK package)
9
Device code
51 32 4 6 7 8 9
VS- 8 E T L 06 S TRL PbF
1 - Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?96055
P1-P3P4-P6P7-P9

VS-8ETL06-1PBF

Mfr. #:
Buy VS-8ETL06-1PBF
Manufacturer:
Vishay
Description:
Rectifiers 8.0 Amp 600 Volt 170ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet