PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 3 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
[2] Measured from pin 1 to pin 2.
[1] Measured from pin 1 to pin 2.
[2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
peak pulse power 8/20 µs
[1][2]
- 130 W
I
PP
peak pulse current 8/20 µs
[1][2]
-12A
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
capability
IEC 61000-4-2 (contact
discharge)
[1][2]
-30kV
HBM MIL-Std 883 - 10 kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2, level 4 (ESD);
Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD 883; class 3 > 4 kV
