OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTDV20P06LT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2011
October, 2016 − Rev. 7
1 Publication Order Number:
NTD20P06L/D
NTD20P06L, NTDV20P06L
Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK
Features
• Withstands High Energy in Avalanche and Commutation Modes
• Low Gate Charge for Fast Switching
• AEC Q101 Qualified − NTDV20P06L
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Bridge Circuits
• Power Supplies, Power Motor Controls
• DC−DC Conversion
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
−60 V
Gate−to−Source
Voltage
Continuous V
GS
$20 V
Non−Repetitive t
p
v10 ms V
GSM
$30
Continuous
Drain Current
(Note 1)
Steady State T
A
= 25°C I
D
−15.5 A
Power Dissipa-
tion (Note 1)
Steady State T
A
= 25°C P
D
65 W
Pulsed Drain
Current
t
p
= 10 ms
I
DM
$50 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 25 V, V
GS
= 5 V, I
PK
= 15 A,
L = 2.7 mH, R
G
= 25 W)
E
AS
304 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain)
R
q
JC
2.3
°C/W
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
80
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
110
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
P−Channel
D
S
G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
20P06L Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
IPAK/DPAK
CASE 369D
STYLE 2
1
2
3
4
−60 V
130 mW @ −5.0 V
I
D
MAX
(Note 1)
V
(BR)DSS
AYWW
T20
P06LG
AYWW
T20
P06LG
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
R
DS(on)
TYP
−15.5 A
www.onsemi.com
NTD20P06L, NTDV20P06L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−60 −74 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−64 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −60 V
T
J
= 25°C −1.0 mA
T
J
= 150°C −10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1.0 −1.5 −2.0 V
Gate Threshold Temperature Coefficient V
GS(TH)
/T
J
3.1 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −5.0 V, I
D
= −7.5 A 0.130 0.150 W
V
GS
= −5.0 V, I
D
= −15 A 0.143
Forward Transconductance g
FS
V
DS
= −10 V, I
D
= −7.5 A 11 S
Drain−to−Source On−Voltage V
DS(on)
V
GS
= −5.0 V,
I
D
= −7.5 A
T
J
= 25°C −1.2
V
T
J
= 150°C −1.9
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= −25 V
740 1190
pF
Output Capacitance C
OSS
207 300
Reverse Transfer Capacitance C
RSS
66 120
Total Gate Charge Q
G(TOT)
V
GS
= −5.0 V, V
DS
= −48 V,
I
D
= −18 A
15 26
nC
Gate−to−Source Charge Q
GS
4.0
Gate−to−Drain Charge Q
GD
7.0
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= −5.0 V, V
DD
= −30 V,
I
D
= −15 A, R
G
= 9.1 W
11 20
ns
Rise Time t
r
90 180
Turn−Off Delay Time t
d(OFF)
28 50
Fall Time t
f
70 135
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= −15 A
T
J
= 25°C 1.5 2.5
V
T
J
= 150°C 1.3
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= −12 A
60
ns
Charge Time t
a
39
Discharge Time t
b
21
Reverse Recovery Charge Q
RR
0.13 nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NTD20P06L, NTDV20P06L
www.onsemi.com
3
0
5
10
15
20
25
30
35
40
012345678910
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
V
GS
= −6 V
V
GS
= −5.5 V
V
GS
= −5 V
V
GS
= −4.5 V
V
GS
= −4 V
V
GS
= −3.5 V
V
GS
= −3 V
V
GS
= −10 V
V
GS
= −9 V
V
GS
= −8 V
V
GS
= −7 V
T
J
= 25°C
0
10
20
30
40
0123456789
−V
DS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
−I
D
, DRAIN CURRENT (A)
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
VDS w 10 V
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 5 10 15 20 25 30
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(W)
Figure 3. On−Resistance versus Drain Current
and Temperature
−I
D
, DRAIN CURRENT (A)
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
V
GS
= −5 V
0
0.025
0.05
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
0 3 6 9 12 15 18 21 24
V
GS
= −5 V
V
GS
= −10 V
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−I
D
, DRAIN CURRENT (A)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−50 −25 0 25 50 75 100 125 150
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= −7.5 A
V
GS
= −5 V
1
10
100
1000
10000
5 1015202530354045505560
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, LEAKAGE (nA)
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
P1-P3P4-P6P7-P7

NTDV20P06LT4G

Mfr. #:
Buy NTDV20P06LT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 60V 15.5A 130R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet