NTDV20P06LT4G

NTD20P06L, NTDV20P06L
www.onsemi.com
4
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
−10 5 0 5 10 15 20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
V
GS
= 0 V
C, CAPACITANCE (pF)
V
DS
= 0 V T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
C
rss
−V
GS
−V
DS
0
1.25
2.5
3.75
5.0
6.25
7.5
0481216
0
10
20
30
40
50
60
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
−V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
Q
G
Q
GD
Q
gs
V
DS
V
GS
I
D
= −15 A T
J
= 25°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE
(V)
1
10
100
1000
1 10 100
t, TIME (nS)
t
R
t
F
t
d(off)
t
d(on)
V
DD
= −30 V
I
D
= −15 A
V
GS
= −5 V
R
g
, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
5
10
15
20
0 0.25 0.5 0.75 1 1.25 1.5 1.7
5
−I
S
, SOURCE CURRENT (A)
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
V
GS
= 0 V
T
J
= 25°C
NTD20P06L, NTDV20P06L
www.onsemi.com
5
0.1
1
10
100
1000
0.1 1 10 100
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
1
10 ms
dc
V
GS
= −15 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0
50
100
150
200
250
300
350
25 50 75 100 125 150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I
D
= −15 A
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
0.01
0.1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
Figure 13. Thermal Response
t, TIME (s)
R
q
jc(
°
C/W)
, EFFECTIVE TRANSIENT THERMAL RESPONSE
Single Pulse
1
0.1
0.2
0.02
D = 0.5
0.05
0.01
ORDERING INFORMATION
Device Package Shipping
NTD20P06LG
DPAK
(Pb−Free)
75 Units / Rail
NTD20P06LT4G 2500 / Tape & Reel
NTDV20P06LT4G 2500 / Tape & Reel
NTDV20P06LT4G−VF01 2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD20P06L, NTDV20P06L
www.onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE F
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −− 0.040 −− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY
.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
HDETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z

NTDV20P06LT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 60V 15.5A 130R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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