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IRF6811STRPBF

P1-P3P4-P6P7-P9
IRF6811SPbF
www.irf.com 7
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
R
G
V
DD
D.U.T
DirectFET
®
plus Board Footprint, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
D
D
D
D
G=GATE
D=DRAIN
S=SOURCE
GS
IRF6811SPbF
8 www.irf.com
DirectFET
®
plus Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
DirectFET
®
plus Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
IMPERIAL
MIN
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
N/A
0.93
2.00
0.535
0.020
0.08
MAX
4.85
3.95
2.85
0.45
0.52
0.82
0.92
0.82
N/A
0.97
2.10
0.595
0.080
0.17
MIN
0.187
0.146
0.108
0.014
0.019
0.031
0.035
0.031
N/A
0.037
0.079
0.021
0.0008
0.003
METRIC
DIMENSIONS
MAX
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
N/A
0.038
0.083
0.023
0.0031
0.007
IRF6811SPbF
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2011
DirectFET
®
plus Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
REEL DIMENSIONS
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6811STRPBF). For 1000 parts on 7"
reel, order IRF6811STR1PBF
B
C
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
H
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
G
E
F
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
TR1 OPTION (QTY 1000)
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
IMPERIAL
A
D
LOADED TAPE FEED DIRECTION
A
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
F
B
C
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
D
H
G
P1-P3P4-P6P7-P9

IRF6811STRPBF

Mfr. #:
Buy IRF6811STRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC
Lifecycle:
New from this manufacturer.
Delivery:
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