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AUIRLZ44Z

P1-P3P4-P6P7-P9P10-P12
06/10/11
www.irf.com 1
AUTOMOTIVE GRADE
PD - 97682
HEXFET
®
Power MOSFET
AUIRLZ44Z
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
S
D
G
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage
V
E
AS(Thermally Limited)
Single Pulse Avalanche Energy
mJ
E
AS
(tested )
Single Pulse Avalanche Energy Tested Value
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 1.87
R
θCS
Case-to-Sink, Flat Greased Surface
0.50 ––– °C/W
R
θJA
Junction-to-Ambient
––– 62
-55 to + 175
300
10 lbf
in (1.1N m)
80
0.53
± 16
Max.
51
36
204
110
78
See Fig.12a, 12b, 15, 16
TO-220AB
AUIRLZ44Z
S
D
G
D
V
(BR)DSS
55V
R
DS(on)
typ.
11m
Ω
max.
13.5m
Ω
I
D
51A
AUIRLZ44Z
2 www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.166mH
R
G
= 25Ω, I
AS
= 31A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the
same charging time as C
oss
while V
DS
is rising
from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting T
J
= 25°C, L = 0.166mH, R
G
= 25Ω, I
AS
= 31A, V
GS
=10V.
R
θ
is measured at T
J
approximately 90°C.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
Δ
V
(BR)DSS
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.05
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
11
13.5
m
Ω
–––
–––
20
m
Ω
–––
–––
22.5
m
Ω
V
GS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
27
–––
–––
V
DSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
24
36
Q
gs
Gate-to-Source Charge
–––
7.5
–––
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
12
–––
d(on)
Turn-On Delay Time
–––
14
–––
r
Rise Time
–––
160
–––
d(off)
Turn-Off Delay Time
–––
25
–––
ns
f
Fall Time
–––
42
–––
L
D
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
1620
–––
C
oss
Output Capacitance
–––
230
–––
C
rss
Reverse Transfer Capacitance
–––
130
–––
pF
C
oss
Output Capacitance
–––
860
–––
C
oss
Output Capacitance
–––
180
–––
C
oss
eff.
Effective Output Capacitance
–––
280
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
S
Continuous Source Current
–––
–––
51
(Body Diode) A
SM
Pulsed Source Current
–––
–––
204
(Body Diode)
V
SD
Diode Forward Voltage
–––
–––
1.3
V
rr
Reverse Recovery Time
–––
21
32
ns
Q
rr
Reverse Recovery Charge
–––
16
24
nC
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 5.0V, I
D
= 30A
V
GS
= 4.5V, I
D
= 15A
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
DS
= 25V, I
D
= 31A
I
D
= 31A
V
DS
= 44V
V
GS
= 16V
V
GS
= -16V
Conditions
V
GS
= 5.0V
V
DD
= 50V
I
D
= 31A
R
G
= 7.5
Ω
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
T
J
= 25°C, I
F
= 31A, V
DD
= 28V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 5.0V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
AUIRLZ44Z
www.irf.com 3
Qualification Information
†
TO-220AB N/A
Charged Device Model
Class C5(+/- 1125V )
†††
(per AEC-Q101-005)
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Moisture Sensitivity Level
RoHS Compliant
Yes
ESD
Machine Model
Class M4(+/- 425V )
†††
(per AEC-Q101-002)
Human Body Model
Class H1C(+/- 2000V )
†††
(per AEC-Q101-001)
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
P1-P3P4-P6P7-P9P10-P12

AUIRLZ44Z

Mfr. #:
Buy AUIRLZ44Z
Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms
Lifecycle:
New from this manufacturer.
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