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AUIRLZ44Z
P1-P3
P4-P6
P7-P9
P10-P12
AUIRLZ44Z
4
www.irf.com
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
0
1
02
03
04
05
0
I
D,
Dr
ain-t
o-S
ource Cur
rent
(A)
0
20
40
60
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°
C
T
J
= 175°
C
V
DS
= 10V
380
μ
s PUL
SE WIDTH
0.1
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60
μ
s PUL
SE WIDTH
Tj
=
25°C
3.0V
VGS
TOP
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM
3.0V
0.1
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60
μ
s PUL
SE WIDTH
Tj
=
175°C
3.0V
VGS
TOP
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM
3.0V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, G
ate-t
o-S
ource Vol
tage (
V)
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 20V
≤
60
μ
s PUL
SE WIDTH
T
J
= 25°
C
T
J
= 175°
C
AUIRLZ44Z
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
0
500
1000
1500
2000
2500
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
1
02
03
04
05
0
Q
G
Tot
al G
ate Char
ge (nC
)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
VDS= 28
V
VDS= 11
V
I
D
= 31A
0.2
0.6
1.
0
1.
4
1.8
V
SD
, S
ource-t
o-D
rai
n Vol
tage (V
)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rai
n-toS
ource V
olt
age (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°
C
Tj
=
175°C
Si
ngle P
ulse
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100
μ
sec
a
nce
AUIRLZ44Z
6
www.irf.com
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
T
J
, Junct
ion T
emperat
ure (°
C)
0
10
20
30
40
50
60
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangul
ar Pul
se Dur
ati
on (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1/t2
2. P
eak Tj
= P
dm x Zt
hjc +
Tc
Ri (°C/W)
τ
i (sec)
0.736 0.000345
0.687 0.00147
0.449 0.007058
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion T
emperat
ure (°
C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 30A
V
GS
= 5.
0V
P1-P3
P4-P6
P7-P9
P10-P12
AUIRLZ44Z
Mfr. #:
Buy AUIRLZ44Z
Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms
Lifecycle:
New from this manufacturer.
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AUIRLZ44Z