MT4JTF12864AZ-1G6D1

PDF: 09005aef837d3ecf/Source: 09005aef837d3e17 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8C128_256x64AZ.fm - Rev. A 1/09 EN
7 ©2007 Micron Technology, Inc. All rights reserved.
1GB, 2GB (x64, SR): 240-Pin DDR3 SDRAM UDIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed in Table 7, may cause permanent damage to the DRAM
devices on the module. This is a stress rating only, and functional operation of the
module at these or any other conditions outside those indicated in each devices data
sheet is not implied. Exposure to absolute maximum rating conditions for extended
periods may adversely affect reliability.
Notes: 1. Vref must not be greater than 0.6 x Vdd. When Vdd is less than 500mV, Vref may be equal
to or less than 300mV.
Notes: 1. Vtt termination voltage in excess of stated limit will adversely affect the command and
address signals' voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. The refresh rate is required to double when 85°C < T
C
95°C.
4. For further information, refer to technical note TN-00-08: “Thermal Applications,” available
on Micron’s Web site.
Table 7: Absolute Maximum Ratings
Symbol Parameter Min Max Units
Vdd
1
Vdd supply voltage relative to Vss
–0.4 +1.975 V
Vin, Vout
Voltage on any pin relative to Vss
–0.4 +1.975 V
Ii
Input leakage current; Any input 0V Vin Vdd;
Vref input 0V Vin 0.95V (All other pins not under
test = 0V)
Address inputs,
RAS#, CAS#, WE#,
S#, CKE, ODT, BA,
CK, CK#
–16 +16 µA
DM
–2 +2
Ioz
Output leakage current; 0V Vout Vddq; DQ and
ODT are disabled
DQ, DQS, DQS#
–5 +5 µA
Ivref
Vref leakage current; Vref = valid Vref level
–8 +8 µA
Table 8: Operating Conditions
Symbol Parameter Min Max Units
Ivtt
Termination reference current from Vtt
–600 +600 mA
Vtt
1
Termination reference voltage – command address bus
–0.483 × Vdd +0.517 × Vdd V
T
A
2,4
Module ambient operating temperature Commercial
0+70°C
Industrial
–40 +85 °C
T
C
2,4
DDR3 SDRAM component case operating
temperature
3
Commercial
0+85°C
Industrial
–40 +95 °C
PDF: 09005aef837d3ecf/Source: 09005aef837d3e17 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8C128_256x64AZ.fm - Rev. A 1/09 EN
8 ©2007 Micron Technology, Inc. All rights reserved.
1GB, 2GB (x64, SR): 240-Pin DDR3 SDRAM UDIMM
Electrical Specifications
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Microns Web site. Module speed grades
correlate with component speed grades, as shown in Table 9.
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully
designed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the systems
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to
ensure the required supply voltage is maintained.
Table 9: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades
Module Speed Grade Component Speed Grade
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
PDF: 09005aef837d3ecf/Source: 09005aef837d3e17 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF8C128_256x64AZ.fm - Rev. A 1/09 EN
9 ©2007 Micron Technology, Inc. All rights reserved.
1GB, 2GB (x64, SR): 240-Pin DDR3 SDRAM UDIMM
Electrical Specifications
Idd Specifications
Table 10: DDR3 Idd Specifications and Conditions – 1GB
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
Parameter Symbol 1600 1333 1066 800 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Idd0 960 880 800 720 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Idd1 1120 1040 960 880 mA
Precharge power-down current: Slow exit
Idd2P 80 80 80 80 mA
Precharge power-down current: Fast exit
Idd2P 200 200 200 200 mA
Precharge quiet standby current
Idd2Q 440 400 360 320 mA
Precharge standby current
Idd2N 480 440 400 360 mA
Active power-down current
Idd3P 320 280 240 200 mA
Active standby current
Idd3N 520 480 440 400 mA
Burst read operating current
Idd4R 2000 1600 1280 1040 mA
Burst write operating current
Idd4W 1800 1520 1280 1040 mA
Refresh current
Idd5B 2080 1920 1760 1600 mA
Self refresh temperature current: MAX T
C
= 85°C
Idd6 48 48 48 48 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C
Idd6ET 72 72 72 72 mA
All banks interleaved read current
Idd7 4800 3920 3120 2800 mA
Table 11: DDR3 Idd Specifications and Conditions – 2GB
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the
2Gb (256 Meg x 8) component data sheet
Parameter Symbol 1333 1066 800 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Idd0 1040 960 800 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Idd1 1240 1080 920 mA
Precharge power-down current: Slow exit
Idd2P 80 80 80 mA
Precharge power-down current: Fast exit
Idd2P 200 200 200 mA
Precharge quiet standby current
Idd2Q 560 480 400 mA
Precharge standby current
Idd2N 560 480 400 mA
Active power-down current
Idd3P 480 400 360 mA
Active standby current
Idd3N 720 600 520 mA
Burst read operating current
Idd4R 2040 1800 1560 mA
Burst write operating current
Idd4W 2400 2120 1840 mA
Refresh current
Idd5B 2440 2320 2200 mA
Self refresh temperature current: MAX T
C
= 85°C
Idd6 72 72 72 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C
Idd6ET 96 96 96 mA
All banks interleaved read current
Idd7 3680 3440 3200 mA

MT4JTF12864AZ-1G6D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 1GB 240UDIMM
Lifecycle:
New from this manufacturer.
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