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HMC434SRJZ-EP-PT

P1-P3P4-P6P7-P7
0.2 GHz to 8 GHz, GaAs, HBT MMIC,
Divide by 8 Prescaler
Enhanced Product
HMC434-EP
Rev. A Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2017 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Ultralow SSB phase noise: −150 dBc/Hz typical
Single-ended input/outputs
RF output power: −2 dBm typical
Single-supply operation: 3 V
Ultrasmall, surface-mount, 2.90 mm × 2.80 mm, 6-lead SOT-23
package
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Extended industrial temperature range: −55°C to +105°C
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
Product change notification
Qualification data available upon request
APPLICATIONS
DC to C band PLL prescalers
Very small aperture terminal (VSAT) radios
Unlicensed national information infrastructure (UNII) and
point to point radios
IEEE 802.11a and high performance radio local area network
(HiperLAN) WLAN
Fiber optics
Cellular/3G infrastructure
FUNCTIONAL BLOCK DIAGRAM
F
igure 1.
GENERAL DESCRIPTION
The HMC434-EP is a low noise, static, divide by 8 prescaler
monolithic microwave integrated circuit (MMIC) utilizing
indium gallium phosphide/gallium arsenide (InGaP/GaAs)
heterojunction bipolar transistor (HBT) technology in an
ultrasmall surface-mount 6-lead SOT-23 package.
The HMC434-EP operates from near dc (square wave) or
0.2 GHz (sine wave) to 8 GHz input frequency with a single 3 V dc
supply.
The HMC434-EP features single-ended inputs and outputs for
reduced component count and cost. The low additive single
sideband (SSB) phase noise of −150 dBc/Hz at 100 kHz offset
helps the user maintain optimal system noise performance.
Additional application and technical information can be found
in the HMC434 data sheet.
OUTIN
÷8
VCC
GND
HMC434-EP
15647-001
HMC434-EP Enhanced Product
Rev. A | Page 2 of 7
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance .......................................................................4
ESD Caution...................................................................................4
Pin Configuration and Function Descriptions ..............................5
Interface Schematics .....................................................................5
Typical Performance Characteristics ..............................................6
Outline Dimensions ..........................................................................7
Ordering Guide .............................................................................7
REVISION HISTORY
8/2017—Rev. 0 to Rev. A
Changes to Features Section and General Description Section...... 1
Added Endnote 2 to Table 1 ............................................................ 3
3/2017
—Revision 0: Initial Versi on
Enhanced Product HMC434-EP
Rev. A | Page 3 of 7
SPECIFICATIONS
V
CC
= 3 V, T
A
= 25°C, 50 Ω system, unless otherwise noted. P
IN
is input power.
Table 1.
Parameter Min Typ Max Unit Test Conditions / Comments
RADIO FREQUENCY (RF) INPUT
Frequency
1, 2
0.2 8 GHz Sine wave input
Power –10 0 +10 dBm f
IN
= 1.0 GHz to 3.0 GHz
0 0 10 dBm f
IN
= 3.0 GHz to 8.0 GHz
RF OUTPUT
SSB Phase Noise −150 dBc/Hz 100 kHz offset, P
IN
= 0 dBm, f
IN
= 4.0 GHz
Power –5 –2 dBm f
IN
= 1.0 GHz to 8.0 GHz
REVERSE LEAKAGE −25 dBm P
IN
= 0 dBm, f
IN
= 4.0 GHz , output terminated
SUPPLY
Voltage (V
CC
) 2.85 3 3.15 V
Current (I
CC
) 62 83 mA
1
Below 200 MHz, a square wave input is required.
2
For stable operation without an input signal, refer to the AN-1463 Application Note, Frequency Divider Operation and Compensation with No Input Signal.
P1-P3P4-P6P7-P7

HMC434SRJZ-EP-PT

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Buy HMC434SRJZ-EP-PT
Manufacturer:
Analog Devices / Hittite
Description:
Prescaler EP InGaP HBT Divide-by-8
Lifecycle:
New from this manufacturer.
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