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AD835ARZ-REEL

P1-P3P4-P6P7-P9P10-P12P13-P15
Data Sheet AD835
SPECIFICATIONS
T
A
= 25°C, V
S
= ±5 V, R
L
= 150 Ω, C
L
≤ 5 pF, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
TRANSFER FUNCTION
( )( )
Z
U
YYXX
W +
−−
=
2121
INPUT CHARACTERISTICS (X, Y)
Differential Voltage Range V
CM
= 0 V ±1 V
Differential Clipping Level ±1.2
1
±1.4 V
Low Frequency Nonlinearity X = ±1 V, Y = 1 V 0.3 0.5
1
% FS
Y = ±1 V, X = 1 V 0.1 0.3
1
% FS
vs. Temperature T
MIN
to T
MAX
2
X = ±1 V, Y = 1 V 0.7 % FS
Y = ±1 V, X = 1 V 0.5 % FS
Common-Mode Voltage Range −2.5 +3 V
Offset Voltage ±3 ±20
1
mV
vs. Temperature T
MIN
to T
MAX
2
±25 mV
CMRR
f ≤ 100 kHz; ±1 V p-p
1
dB
Bias Current 10 20
1
µA
vs. Temperature T
MIN
to T
MAX
2
27 µA
Offset Bias Current 2 µA
Differential Resistance 100 kΩ
Single-Sided Capacitance 2 pF
Feedthrough, X X = ±1 V, Y = 0 V −46
1
dB
Feedthrough, Y Y = ±1 V, X = 0 V −60
1
dB
DYNAMIC CHARACTERISTICS
−3 dB Small Signal Bandwidth 150 250 MHz
−0.1 dB Gain Flatness Frequency 15 MHz
Slew Rate W = −2.5 V to +2.5 V 1000 V/µs
Differential Gain Error, X f = 3.58 MHz 0.3 %
Differential Phase Error, X f = 3.58 MHz 0.2 Degrees
Differential Gain Error, Y
f = 3.58 MHz
0.1
%
Differential Phase Error, Y f = 3.58 MHz 0.1 Degrees
Harmonic Distortion X or Y = 10 dBm, second and third harmonic
Fund = 10 MHz −70 dB
Fund = 50 MHz −40 dB
Settling Time, X or Y To 0.1%, W = 2 V p-p 20 ns
SUMMING INPUT (Z)
Gain From Z to W, f ≤ 10 MHz 0.990 0.995
−3 dB Small Signal Bandwidth 250 MHz
Differential Input Resistance 60 kΩ
Single-Sided Capacitance 2 pF
Maximum Gain X, Y to W, Z shorted to W, f = 1 kHz 50 dB
Bias Current 50 µA
Rev. E | Page 3 of 14
AD835 Data Sheet
Parameter Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Voltage Swing ±2.2 ±2.5 V
vs. Temperature T
MIN
to T
MAX
2
±2.0 V
Voltage Noise Spectral Density X = Y = 0 V, f < 10 MHz 50 nV/√Hz
Offset Voltage
±25
±75
1
mV
vs. Temperature
3
T
MIN
to T
MAX
2
±10 mV
Short-Circuit Current 75 mA
Scale Factor Error ±5 ±8
1
% FS
vs. Temperature T
MIN
to T
MAX
2
±9 % FS
Linearity (Relative Error)
4
±0.5 ±1.0
1
% FS
vs. Temperature T
MIN
to T
MAX
2
±1.25 % FS
POWER SUPPLIES
Supply Voltage
For Specified Performance
±5
±5.5
V
Quiescent Supply Current 16 25
1
mA
vs. Temperature T
MIN
to T
MAX
2
26 mA
PSRR at Output vs. VP +4.5 V to +5.5 V 0.5
1
%/V
PSRR at Output vs. VN −4.5 V to −5.5 V 0.5 %/V
1
All minimum and maximum specifications are guaranteed. These specifications are tested on all production units at final electrical test.
2
T
MIN
= −40°C, T
MAX
= 85°C.
3
Normalized to zero at 25°C.
4
Linearity is defined as residual error after compensating for input offset, output voltage offset, and scale factor errors.
Rev. E | Page 4 of 14
Data Sheet AD835
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage ±6 V
Internal Power Dissipation
300 mW
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature, Soldering 60 sec 300°C
ESD Rating
HBM 1500 V
CDM 250 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
For more information, see the Analog Devices, Inc., Tutorial
MT-092, Electrostatic Discharge.
THERMAL RESISTANCE
Table 3.
Package Type θ
JA
θ
JC
Unit
8-Lead PDIP (N) 90 35 °C/W
8-Lead SOIC (R) 115 45 °C/W
ESD CAUTION
Rev. E | Page 5 of 14
P1-P3P4-P6P7-P9P10-P12P13-P15

AD835ARZ-REEL

Mfr. #:
Buy AD835ARZ-REEL
Manufacturer:
Analog Devices Inc.
Description:
Multipliers / Dividers 250 MHz V-Out 4-Quadrant
Lifecycle:
New from this manufacturer.
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