IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
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Vishay Siliconix
S13-0171-Rev. D, 04-Feb-13
4
Document Number: 91267
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1
10
100
1000
10000
1 10 100 1000
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 2 4 6 8 10 12 14
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.4A
V = 120V
DS
V = 300V
DS
V = 480V
DS
0.1
1
10
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
