BTS410E2
Data Sheet 10 2013-10-15
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 in GND connection, protection against loss of
ground
Overtemperature protection with hysteresis
T
j
>150 °C, latch function
16
)
17
)
T
j
>150 °C, with auto-restart on cooling
Short circuit to GND protection
switches off when V
ON
>3.5 V typ. and V
bb
> 7 V
typ
16
)
(when first turned on after approx. 150 s)
switches off when V
ON
>8.5 V typ.
16)
(when first turned on after approx. 150 s)
Achieved through overtemperature protection
in OFF-state with sensing current 30 A typ.
in ON-state with sensing voltage drop across
power transistor
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
18
)
overtemperature
short circuit to GND
short to V
bb
open load
undervoltage
overvoltage
Output negative voltage transient limit
(fast inductive load switch off)
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
)
Latch except when V
bb
-V
OUT
< V
ON(SC)
after shutdown. In most cases
VOUT
= 0 V after shutdown (V
OUT
0 V only if forced externally). So the device remains latched unless V
bb
< V
ON(SC)
(see page 4). No latch
between turn on and t
d(SC)
.
)
With latch function. Reseted by a) Input low, b) Undervoltage
)
No auto restart after overvoltage in case of short circuit
)
Low resistance short V
bb
to output may be detected in ON-state by the no-load-detection