MUBW10-12A7

1 - 8
© 2002 IXYS All rights reserved
B4
Converter - Brake - Inverter Module (CBI2)
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings
V
RRM
1600 V
I
FAV
T
C
= 80°C; sine 180° 19 A
I
DAVM
T
C
= 80°C; rectangular; d = 1/3 18 A
I
FSM
T
VJ
= 25°C; t = 10 ms; sine 50 Hz 160 A
P
tot
T
C
= 25°C 85 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
F
I
F
= 10 A; T
VJ
= 25°C 1.3 1.6 V
T
VJ
= 125°C 1.3 V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C 0.1 mA
T
VJ
= 125°C 1 mA
t
rr
V
R
= 100 V;
I
F
= 10 A; di/dt = -10 A/µs 1 µs
R
thJC
(per diode) 1.47 K/W
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
RRM
= 1600V V
CES
= 1200 V V
CES
= 1200 V
I
DAVM
= 26 A I
C25
= 20 A I
C25
= 20 A
I
FSM
= 160 A V
CE(sat)
= 2.3 V V
CE(sat)
= 2.3 V
203
MUBW 10-12 A7
NTC
D11 D13 D15
D12
D14
D16
1
23
D7
T7
T1
D1
T3
D3
T2
T4
T6
T5
D4
D2
D6
D5
21
22
7
6
4
5
16
15
18
17
20
19
11
10
23
24
14
8
9
12 13
Application: AC motor drives with
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
behaviour
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
2 - 8
© 2002 IXYS All rights reserved
B4
MUBW 10-12 A7
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 1200 V
V
GES
Continuous
±
20 V
V
GEM
Transient
±
30 V
I
C25
T
C
= 25°C 20 A
I
C80
T
C
= 80°C 15 A
RBSOA V
GE
=
±
15 V; R
G
= 82 ; T
VJ
= 125°C I
CM
= 20 A
Clamped inductive load; L = 100 µH V
CEK
V
CES
t
SC
V
CE
= 720 V; V
GE
=
±
15 V; R
G
= 82 ; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 105 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25°C 2.3 2.7 V
T
VJ
= 125°C 2.7 V
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.6 mA
T
VJ
= 125°C 0.6 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
50 ns
t
r
40 ns
t
d(off)
290 ns
t
f
60 ns
E
on
1.2 mJ
E
off
1.1 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 600 pF
Q
Gon
V
CE
= 600V; V
GE
= 15 V; I
C
= 10 A 45 nC
R
thJC
(per IGBT) 1.2 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
=
±
15 V; R
G
= 82
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
T
C
= 25°C 25 A
I
F80
T
C
= 80°C 15 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 10 A; V
GE
= 0 V; T
VJ
= 25°C 2.2 2.6 V
T
VJ
= 125°C 1.6 V
I
RM
I
F
= 15 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C 16 A
t
rr
V
R
= 600 V; V
GE
= 0 V 130 ns
R
thJC
(per diode) 2.1 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J
= 125°C)
V
0
= 1.11 V; R
0
= 19 m
T1 - T6 / D1 - D6
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.32V; R
0
= 131 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.32 V; R
0
= 30 m
T7 / D7
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.32 V; R
0
= 131 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.39 V; R
0
= 56 m
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.093 J/K; R
th1
= 1.212 K/W
C
th2
= 0.778 J/K; R
th2
= 0.258K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.09 J/K; R
th1
= 0.954 K/W
C
th2
= 0.809J/K; R
th2
= 0.246 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.758 K/W
C
th2
= 0.639 J/K; R
th2
= 0.342 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.09 J/K; R
th1
= 0.954 K/W
C
th2
= 0.809 J/K; R
th2
= 0.246 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
3 - 8
© 2002 IXYS All rights reserved
B4
MUBW 10-12 A7
Brake Chopper T7
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 1200 V
V
GES
Continuous
±
20 V
V
GEM
Transient
±
30 V
I
C25
T
C
= 25°C 20 A
I
C80
T
C
= 80°C 15 A
RBSOA V
GE
=
±
15 V; R
G
= 82 ; T
VJ
= 125°C I
CM
= 20 A
Clamped inductive load; L = 100 µH V
CEK
V
CES
t
SC
V
CE
= 720 V; V
GE
=
±
15 V; R
G
= 82 ; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 105 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25°C 2.3 2.7 V
T
VJ
= 125°C 2.7 V
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.5 mA
T
VJ
= 125°C 0.3 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
50 ns
t
r
40 ns
t
d(off)
290 ns
t
f
60 ns
E
on
1.2 mJ
E
off
1.1 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MH z 600 pF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A 45 nC
R
thJC
1.2 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
V
RRM
T
VJ
= 25°C to 150°C 1200 V
I
F25
T
C
= 25°C 17 A
I
F80
T
C
= 80°C 11 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 10 A; T
VJ
= 25°C 2.9 V
T
VJ
= 125°C 1.9 V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C 0.06 mA
T
VJ
= 125°C 0.07 mA
I
RM
I
F
= 10 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C 13 A
t
rr
V
R
= 600 V 110 ns
R
thJC
3.2 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
=
±
15 V; R
G
= 82

MUBW10-12A7

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 10 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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