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MUBW10-12A7
P1-P3
P4-P6
P7-P8
4 - 8
© 2002 IXYS All rights reserved
B4
MUBW 10-12 A7
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25°C
4.75
5.0
5.25
k
Ω
B
25/50
3375
K
Module
Symbol
Conditions
Maximum Ratings
T
VJ
Operating
-40...+125
°
C
T
JM
150
°
C
T
stg
-40...+125
°
C
V
ISOL
I
ISOL
≤
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
N
m
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
5m
Ω
d
S
Creepage distance on surface
6
mm
d
A
Strike distance in air
6
mm
R
thCH
with heatsink compound
0.02
K/W
Weight
180
g
Dimensions in mm (1 mm = 0.0394")
5 - 8
© 2002 IXYS All rights reserved
B4
MUBW 10-12 A7
0.001
0.01
0.1
1
0
20
40
60
80
100
23
4
5
6
7
8
9
11
0
10
1
10
2
10
3
0.0
0.
4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
0
2
04
06
08
0
0
100
200
300
400
500
0
2
04
06
08
0
1
0
0
1
2
0
1
4
0
0.001
0.01
0.1
1
10
0.0
0.4
0.8
1.2
1.6
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0
2
04
06
08
0
1
0
0
1
2
0
1
4
0
0
10
20
30
40
50
60
I
d(AV)
T
C
A
V
A
°C
°C
DWF
N9-16
Z
thJC
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
= 150°C
50Hz, 80% V
RRM
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
Fig.
4
Power dissipation versus direct output current and ambient temperature, sin 180°
Fig. 5
Max. forward current versus
case temperature
Fig. 6
Transient thermal impedance junction to case
Fig. 1
Forward current versus voltage
drop per diode
Fig. 2
Surge overload current
Fig. 3
I
2
t
versus time per diode
Input Rectifier Bridge D11 - D16
6 - 8
© 2002 IXYS All rights reserved
B4
MUBW 10-12 A7
Fig. 7
Typ. output
characteristics
Fig. 8
Typ. output
characteristics
Fig. 9
Typ. transfer
characteristics
Fig. 10
Typ. forward characteristics of
free wheeling diode
Fig. 11
Typ. turn on gate charge
Fig. 12
Typ. turn off characteristics of
free wheeling diode
Output Inverter T1 - T6 / D1 - D6
0
2
00
400
600
800
1000
0
10
20
30
40
50
0
40
80
120
160
200
01234567
0
5
10
15
20
25
30
0
1
02
03
04
05
06
0
0
5
10
15
20
012345
67
0
5
10
15
20
25
30
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 600V
I
C
= 10A
V
CE
V
I
C
V
CE
A
I
C
V
Q
G
-di/d
t
V
V
GE
I
RM
t
rr
A/
µ
s
MUBW
1012A7
I
RM
t
rr
9V
11V
V
GE
= 17V
15V
13V
A
11V
V
GE
= 17V
15V
13V
A
4
6
8
10
12
14
16
0
5
10
15
20
25
30
V
CE
= 20V
V
V
GE
A
I
C
T
VJ
= 25°C
T
VJ
= 125°C
01234
0
10
20
30
40
50
V
V
F
I
F
A
ns
9V
nC
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
V
R
= 600 V
I
F
= 15 A
P1-P3
P4-P6
P7-P8
MUBW10-12A7
Mfr. #:
Buy MUBW10-12A7
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 10 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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MUBW10-12A7