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PBSS5330PA,135
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
NXP Semiconductors
PBSS5330P
A
30 V
, 3 A PNP low VCEsat (BISS) transistor
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 April 2015
9 / 16
006aac038
0
-
1.2
-
0.4
-
0.8
-
10
-
1
-
1
-
10
-
10
2
-
10
3
-
10
4
V
BE
(V)
I
C
(mA)
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 8.
Base-emitter voltage as a function of collector
current; typical values
006aac039
-
0.2
-
1.4
-
0.6
-
1.0
-
10
-
1
-
1
-
10
-
10
2
-
10
3
-
10
4
V
BEsat
(V)
I
C
(mA)
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 9.
Base-emitter saturation voltage as a function of
collector current; typical values
006aac040
-
1
-
10
- 1
-
10
- 2
-
10
- 3
-
10
- 1
-
1
-
10
-
10
2
-
10
4
-
10
3
V
CEsat
(V)
I
C
(mA)
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aac041
-
1
-
1
-
10
-
10
2
-
10
4
-
10
3
I
C
(mA)
-
10
- 2
-
10
- 3
-
10
- 1
V
CEsat
(V)
-
10
- 1
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 1
1.
Collector-emitter saturation voltage as a
function of collector current; typical values
NXP Semiconductors
PBSS5330P
A
30 V
, 3 A PNP low VCEsat (BISS) transistor
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 April 2015
10 / 16
006aac042
10
2
10
1
10
- 1
10
- 2
-
10
-
1
-
1
-
10
-
10
2
-
10
3
-
10
4
R
CEsat
(Ω)
I
C
(mA)
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 12.
Collector-emitter saturation resistance as a
function of collector current; typical values
006aac043
10
2
10
1
10
-
1
10
-
2
-
10
-
1
-
1
-
10
-
10
2
-
10
3
-
10
4
R
CEsat
(Ω)
I
C
(mA)
10
3
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 13.
Collector-emitter saturation resistance as a
function of collector current; typical values
NXP Semiconductors
PBSS5330P
A
30 V
, 3 A PNP low VCEsat (BISS) transistor
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 April 2015
11 / 16
1
1.
T
est information
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 14.
BISS transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 15.
T
est circuit for switching times
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
PBSS5330PA,135
Mfr. #:
Buy PBSS5330PA,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS5330PA/HUSON3/REEL 13" Q1/
Lifecycle:
New from this manufacturer.
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