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PBSS5330PA,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
NXP Semiconductors
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
PBSS5330PA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 April 2015 6 / 16
006aab982
10
- 5
1010
- 2
10
- 4
10
2
10
- 1
t
p
(s)
10
- 3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W)
10
- 1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
PBSS5330PA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 April 2015 7 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -30 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -30 V; I
E
= 0 A; T
j
= 150 °C - - -50 µA
I
CES
collector-emitter cut-off
current
V
CE
= -24 V; V
BE
= 0 V; T
amb
= 25 °C - - -100 nA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -2 V; I
C
= -0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
200 320 -
V
CE
= -2 V; I
C
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
175 280 450
V
CE
= -2 V; I
C
= -2 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
140 210 -
h
FE
DC current gain
V
CE
= -2 V; I
C
= -3 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
100 160 -
I
C
= -0.5 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -45 -70 mV
I
C
= -1 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -90 -130 mV
I
C
= -2 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -170 -240 mV
V
CEsat
collector-emitter
saturation voltage
- -230 -320 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= -3 A; I
B
= -300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 75 107 mΩ
I
C
= -2 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -0.89 -1.1 VV
BEsat
base-emitter saturation
voltage
I
C
= -3 A; I
B
= -300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -0.97 -1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
= -2 V; I
C
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -0.75 -1 V
t
d
delay time - 11 - ns
t
r
rise time - 59 - ns
t
on
turn-on time - 70 - ns
t
s
storage time - 165 - ns
t
f
fall time - 35 - ns
t
off
turn-off time
V
CC
= -9 V; I
C
= -2 A; I
Bon
= -0.1 A;
I
Boff
= 0.1 A; T
amb
= 25 °C
- 200 - ns
NXP Semiconductors
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
PBSS5330PA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 7 April 2015 8 / 16
Symbol Parameter Conditions Min Typ Max Unit
f
T
transition frequency V
CE
= -5 V; I
C
= -100 mA; f = 100 MHz;
T
amb
= 25 °C
100 165 - MHz
C
c
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 38 45 pF
006aac036
0
800
200
400
600
- 10
- 1
- 1 - 10 - 10
2
- 10
3
- 10
4
h
FE
I
C
(mA)
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 6. DC current gain as a function of collector
current; typical values
006aac037
0 - 2.0
- 5
0
- 1
- 2
- 3
- 4
- 0.4 - 0.8 - 1.2 - 1.6
I
C
(A)
V
CE
(V)
I
B
(mA) = - 53
- 37.1
- 26.5
- 15.9
- 5.3
-
1
0
.
6
- 21.2
- 31.8
- 42.4
- 47.7
T
amb
= 25 °C
Fig. 7. Collector current as a function of collector-
emitter voltage; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PBSS5330PA,135

Mfr. #:
Buy PBSS5330PA,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS5330PA/HUSON3/REEL 13" Q1/
Lifecycle:
New from this manufacturer.
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