tends to de-age capacitors and is why re-reading of capac-
itance after 12 or 24 hours is allowed in military specifica-
tions after dielectric strength tests have been performed.
Effects of Frequency – Frequency affects capacitance
and impedance characteristics of capacitors. This effect is
much more pronounced in high dielectric constant ceramic
formulation that is low K formulations. AVX’s SpiCap soft-
ware generates impedance, ESR, series inductance, series
resonant frequency and capacitance all as functions of fre-
quency, temperature and DC bias for standard chip sizes
and styles. It is available free from AVX.
Effects of Mechanical Stress – High “K” dielectric
ceramic capacitors exhibit some low level piezoelectric
reactions under mechanical stress. As a general statement,
the piezoelectric output is higher, the higher the dielectric
constant of the ceramic. It is desirable to investigate this
effect before using high “K” dielectrics as coupling capaci-
tors in extremely low level applications.
Reliability – Historically ceramic capacitors have been one
of the most reliable types of capacitors in use today.
The approximate formula for the reliability of a ceramic
capacitor is:
L
o
=
V
t
X T
t
Y
L
t
V
o
T
o
where
L
o
= operating life T
t
= test temperature and
L
t
= test life T
o
= operating temperature
V
t
= test voltage in °C
V
o
= operating voltage X,Y = see text
Historically for ceramic capacitors exponent X has been
considered as 3. The exponent Y for temperature effects
typically tends to run about 8.
A capacitor is a component which is capable of storing
electrical energy. It consists of two conductive plates (elec-
trodes) separated by insulating material which is called the
dielectric. A typical formula for determining capacitance is:
C =
.224 KA
t
C = capacitance (picofarads)
K = dielectric constant (Vacuum = 1)
A = area in square inches
t = separation between the plates in inches
(thickness of dielectric)
.224 = conversion constant
(.0884 for metric system in cm)
Capacitance – The standard unit of capacitance is the
farad. A capacitor has a capacitance of 1 farad when 1
coulomb charges it to 1 volt. One farad is a very large unit
and most capacitors have values in the micro (10
-6
), nano
(10
-9
) or pico (10
-12
) farad level.
Dielectric Constant – In the formula for capacitance given
above the dielectric constant of a vacuum is arbitrarily cho-
sen as the number 1. Dielectric constants of other materials
are then compared to the dielectric constant of a vacuum.
Dielectric Thickness – Capacitance is indirectly propor-
tional to the separation between electrodes. Lower voltage
requirements mean thinner dielectrics and greater capaci-
tance per volume.
Area – Capacitance is directly proportional to the area of
the electrodes. Since the other variables in the equation are
usually set by the performance desired, area is the easiest
parameter to modify to obtain a specific capacitance within
a material group.
38
1 10 100 1000 10,000 100,000
Hours
Capacitance Change Percent
+1.5
0
-1.5
-3.0
-4.5
-6.0
-7.5
Characteristic Max. Aging Rate %/Decade
C0G (NP0)
X7R
Z5U
Y5V
None
2
3
5
Figure 6
Typical Curve of Aging Rate
X7R Dielectric
General Description
39
General Description
Energy Stored – The energy which can be stored in a
capacitor is given by the formula:
E =
1
2CV
2
E = energy in joules (watts-sec)
V = applied voltage
C = capacitance in farads
Potential Change – A capacitor is a reactive component
which reacts against a change in potential across it. This is
shown by the equation for the linear charge of a capacitor:
I
ideal
=
C
dV
dt
where
I = Current
C = Capacitance
dV/dt = Slope of voltage transition across capacitor
Thus an infinite current would be required to instantly
change the potential across a capacitor. The amount of
current a capacitor can “sink” is determined by the above
equation.
Equivalent Circuit – A capacitor, as a practical device,
exhibits not only capacitance but also resistance and induc-
tance. A simplified schematic for the equivalent circuit is:
C = Capacitance L = Inductance
R
s
= Series Resistance R
p
= Parallel Resistance
Reactance – Since the insulation resistance (R
p
) is normally
very high, the total impedance of a capacitor is:
Z = R
2
S
+ (X
C
- X
L
)
2
where
Z = Total Impedance
R
s
= Series Resistance
X
C
= Capacitive Reactance = 1
2 π fC
X
L
= Inductive Reactance = 2 π fL
The variation of a capacitor’s impedance with frequency
determines its effectiveness in many applications.
Phase Angle – Power Factor and Dissipation Factor are
often confused since they are both measures of the loss in a
capacitor under AC application and are often almost identi-
cal in value. In a “perfect” capacitor the current in the
capacitor will lead the voltage by 90°.
In practice the current leads the voltage by some other
phase angle due to the series resistance R
S
. The comple-
ment of this angle is called the loss angle and:
Power Factor (P.F.) = Cos
f
or Sine
Dissipation Factor (D.F.) = tan
for small values of the tan and sine are essentially equal
which has led to the common interchangeability of the two
terms in the industry.
Equivalent Series Resistance – The term E.S.R. or
Equivalent Series Resistance combines all losses both
series and parallel in a capacitor at a given frequency so
that the equivalent circuit is reduced to a simple R-C series
connection.
Dissipation Factor – The DF/PF of a capacitor tells what
percent of the apparent power input will turn to heat in the
capacitor.
Dissipation Factor =
E.S.R.
= (2 π fC) (E.S.R.)
X
C
The watts loss are:
Watts loss = (2 π fCV
2
) (D.F.)
Very low values of dissipation factor are expressed as their
reciprocal for convenience. These are called the “Q” or
Quality factor of capacitors.
Parasitic Inductance – The parasitic inductance of capac-
itors is becoming more and more important in the decou-
pling of today’s high speed digital systems. The relationship
between the inductance and the ripple voltage induced on
the DC voltage line can be seen from the simple inductance
equation:
V = L
di
dt
R
L
R
C
P
S
I (Ideal)
I (Actual)
Phase
Angle
Loss
Angle
V
IR
s
f
E.S.R.
C
40
The seen in current microprocessors can be as high as
0.3 A/ns, and up to 10A/ns. At 0.3 A/ns, 100pH of parasitic
inductance can cause a voltage spike of 30mV. While this
does not sound very drastic, with the Vcc for microproces-
sors decreasing at the current rate, this can be a fairly large
percentage.
Another important, often overlooked, reason for knowing
the parasitic inductance is the calculation of the resonant
frequency. This can be important for high frequency, by-
pass capacitors, as the resonant point will give the most
signal attenuation. The resonant frequency is calculated
from the simple equation:
f
res = 1
2 LC
Insulation Resistance – Insulation Resistance is the resis-
tance measured across the terminals of a capacitor and
consists principally of the parallel resistance R
P shown in
the equivalent circuit. As capacitance values and hence the
area of dielectric increases, the I.R. decreases and hence
the product (C x IR or RC) is often specified in ohm farads
or more commonly megohm-microfarads. Leakage current
is determined by dividing the rated voltage by IR (Ohm’s
Law).
Dielectric Strength – Dielectric Strength is an expression
of the ability of a material to withstand an electrical stress.
Although dielectric strength is ordinarily expressed in volts, it
is actually dependent on the thickness of the dielectric and
thus is also more generically a function of volts/mil.
Dielectric Absorption – A capacitor does not discharge
instantaneously upon application of a short circuit, but
drains gradually after the capacitance proper has been dis-
charged. It is common practice to measure the dielectric
absorption by determining the “reappearing voltage” which
appears across a capacitor at some point in time after it has
been fully discharged under short circuit conditions.
Corona – Corona is the ionization of air or other vapors
which causes them to conduct current. It is especially
prevalent in high voltage units but can occur with low voltages
as well where high voltage gradients occur. The energy
discharged degrades the performance of the capacitor and
can in time cause catastrophic failures.
di
dt
General Description

18125G105ZAT2A

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Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1uF Y5V 1812 .01pF Tol
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