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MT9HTF6472AY-80ED4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
DDR2 SDRAM UDIMM
MT9HTF3272AY – 256MB
MT9HTF6472AY – 512MB
MT9HTF12872AY – 1GB
Features
•
240-pin, unbuffered dual in-line memory module
•
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
•
256MB (32 Meg x 72), 512MB (64 Meg x 72), or 1GB
(128 Meg x 72)
•
V
DD
= V
DDQ
1.8V
•
V
DDSPD
= 1.7–3.6V
•
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•
Differential data strobe (DQS, DQS#) option
•
4n-bit prefetch architecture
•
Single rank
•
Multiple internal device banks for concurrent
operation
•
Programmable CAS latency (CL)
•
Posted CAS# additive latency (AL)
•
WRITE latency = READ latency - 1
t
CK
•
Programmable burst lengths (BL): 4 or 8
•
Adjustable data-output drive strength
•
64ms, 8192-cycle refresh
•
On-die termination (ODT)
•
Serial presence detect (SPD) with EEPROM
•
Gold edge contacts
Figure 1: 240-Pin UDIMM (MO-237 R/C A/F)
Module height 30.0mm (1.18in)
Options Marking
•
Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C)
None
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
I
•
Package
–
240-pin DIMM (lead-free) Y
•
Frequency/CL
2
–
2.5ns @ CL = 5 (DDR2-800)
3, 4
-80E
–
2.5ns @ CL = 6(DDR2-800)
3, 4
-800
–
3.0ns @ CL = 6 (DDR2-667) -667
–
3.75ns @ CL = 5 (DDR2-53E) -53E
–
5.0ns @ CL = 5 (DDR2-40E) -40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Contact Micron for product availability.
4. Not available in 256MB density.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300
–
667 553 400 15 15 55
-53E PC2-4200
– –
553 400 15 15 55
-40E PC2-3200
– –
400 400 15 15 55
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 256MB 512MB 1GB
Refresh count 8K 8K 8K
Row address 8K A[12:0] 16K A[13:0] 16K A[13:0]
Device bank address 4 BA[1:0] 4 BA[1:0] 8 BA[2:0]
Device configuration 256Mb (32 Meg x 8) 512Mb (64 Meg x 8) 1Gb (128 Meg x 8)
Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address 1 S0# 1 S0# 1 S0#
Table 3: Part Numbers and Timing Parameters – 256MB
Base device: MT47H32M8,
1
256Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT9HTF3272A(I)Y-667__ 256MB 32 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT9HTF3272A(I)Y-53E__ 256MB 32 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT9HTF3272A(I)Y-40E__ 256MB 32 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Part Numbers and Timing Parameters – 512MB
Base device: MT47H64M8,
1
512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT9HTF6472A(I)Y-80E__ 512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT9HTF6472A(I)Y-800__ 512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT9HTF6472A(I)Y-667__ 512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT9HTF6472A(I)Y-53E__ 512MB 64 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT9HTF6472A(I)Y-40E__ 512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Table 5: Part Numbers and Timing Parameters – 1GB
Base device: MT47H128M8,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT9HTF12872A(I)Y-80E__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT9HTF12872A(I)Y-800__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT9HTF12872A(I)Y-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT9HTF12872A(I)Y-53E__ 1GB 128 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT9HTF12872A(I)Y-40E__ 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT9HTF6472AY-667C2.
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
Features
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

MT9HTF6472AY-80ED4

Mfr. #:
Buy MT9HTF6472AY-80ED4
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 512MB 240UDIMM
Lifecycle:
New from this manufacturer.
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