NXP Semiconductors
NCR100-8L
SCR
NCR100-8L All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 8 April 2015 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 600 V
V
RRM
repetitive peak reverse voltage - 600 V
I
T(AV)
average on-state current half sine wave; T
sp
≤ 75 °C - 0.5 A
I
T(RMS)
RMS on-state current half sine wave; T
sp
≤ 75 °C; Fig. 1;
Fig. 2; Fig. 3
- 0.8 A
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- 8 AI
TSM
non-repetitive peak on-state
current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
- 9 A
I
2
t I
2
t for fusing
t
p
= 10 ms; SIN - 0.36
A
2
s
dI
T
/dt rate of rise of on-state current I
G
= 0.1 mA - 50 A/µs
I
GM
peak gate current - 1 A
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
T
sp
(°C)
-50 1501000 50
aaa-017158
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
75 °C
Fig. 1. RMS on-state current as a function of solder
point temperature; maximum values
aaa-017159
1
2
3
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10110
-1
f = 50 Hz; T
sp
= 75 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
